Abstract:Ga2O3-based solar-blind ultraviolet photodetectors (PDs) have stimulated extensive attention for covering both civilian and military applications. During the past decade, Ga2O3-based solar-blind PDs have made a great progress in key metrics such as responsivity, detectivity and gain. However, they still suffer from relatively slow response time, from milliseconds to seconds. The trapping states at the surface/interface are believed to contribute to the low response speed. Besides the intrinsic factors, external factors including the illumination and bias voltage also have an important influence on the photoresponse speed. However, there is no in-depth analysis of illumination and bias impact on the photoresponse properties. Herein, we present an experimental investigation on the illumination intensity and bias voltage modulating response speed in a typical Ga2O3-based photoconductive PD. The photoresponse time can be accelerated up to two orders by varying the illumination and bias. The superior photoresponse capabilities of the Ga2O3-based PDs can be ascribed to the light controllable trap/de-trap processes as well as electric field accelerated carrier transport. The study offers clear images of the charge diffusion and drift process in the photodetector upon external stimuli, which will aid to optimize the performance of Ga2O3-based PDs.

Investigation of Responsivity Decreasing with Rising Bias Voltage in a GaN Schottky Barrier Photodetector

Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector

Influence of Defects in N−-Gan Layer on the Responsivity of Schottky Barrier Ultraviolet Photodetectors

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

A Study on the Spectral Response of Back-Illuminated P-I-n AlGaN Heterojunction Ultraviolet Photodetector

Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity

Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN

Impact of voltage-dependent responsivity on photodiode non-linearity

Reliability Considerations of High Speed Germanium Waveguide Photodetectors

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Breaking the Responsivity-Speed Dilemma of A-Gao X Photodetector by Alternating Gate Modulation

Abnormal characteristic measurement of GaN Schottky junction UV detectors

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

Transition of Photoresponsivity in Graphene-Insulator-Silicon Photodetectors

Effect of Asymmetric Schottky Barrier on GaN-based Metal-Semiconductor-metal Ultraviolet Detector

Reliability Characterization of Silicon-Based Germanium Waveguide Photodetectors

Low Dark Current GaN Schottky UV Photodiodes Using Oxidised IrNi Schottky Contact

Effects of the polarization fields on the responsivity of the AlN/GaN photodetectors

Improved response speed of β-Ga2O3 solar-blind photodetectors by optimizing illumination and bias