Abstract:Graphene is one of the most potential field emission cathode materials and a lot of work has been carried out to demonstrate the effectiveness of nitrogen doping (N doping) for the enhancement of field emission properties of graphene. However, the effect of N doping on graphene field emission is lacking systematic and thorough understanding. In this study, undoped graphene and N-doped graphene were prepared and characterized for measurements, and the field emission property dependence of the doping content was investigated and the tuneable effect was discussed. For the undoped graphene, the turn-on field was 7.95 V μm-1 and the current density was 7.3 μA cm-2, and for the 10 mg, 20 mg, and 30 mg N-doped graphene samples, the turn-on fields declined to 7.50 V μm-1, 6.38 V μm-1, and 7.28 V μm-1, and current densities increased to 21.0 μA cm-2, 42.6 μA cm-2, and 13.2 μA cm-2, respectively. Density functional theory (DFT) calculations revealed that N doping could bring about additional charge and then cause charge aggregation around the N atom. At the same time, it also lowered the work function, which further enhanced the field emission. The doping effect was determined by the content of the pyrrolic-type N and pyridinic-type N. Pyridinic-type N is more favourable for field emission because of its smaller work function, which is in good agreement with the experimental results. This study would be of great benefit to the understanding of N doping modulation for superior field emission properties.

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