Adsorption and Film Growth of C-60 on the Gaas(001) 2x6 Surface by Molecular-Beam Epitaxy

QK Xue,T Ogino,Y Hasegawa,H Shinohara,T Sakurai
DOI: https://doi.org/10.1103/physrevb.53.1985
1996-01-01
Abstract:Field ion scanning tunneling microscopy was employed to investigate C-60 film growth on a GaAs(001)-2x6 surface prepared by molecular-beam epitaxy. The corrugated potential of the 2x6 substrate forces the first monolayer structure to be strongly modified, resulting in formation of a ''double-chain'' commensurate structure. A stronger interaction between C-60 and Ga versus C-60 and As was observed. This interaction of C-60 and the substrate, however, is limited for two to three monolayers at the interface and the competing intermolecular interaction governs the three-dimensional growth of multiple-layer C-60 crystalline film of the (111) orientation with a high density of screw dislocations.
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