Abstract:A hot-wall technique is employed to deposit C-60 films on synthetic fluorophlogopite and silicon substrates. X-ray diffraction results show that with increasing substrate temperature from 433 to 473 K, well(111) oriented films are deposited on fluorophlogopite (001) substrate. Films on silicon (100) are polycrystalline with relatively large grains, and their quality improves with substrate temperature as well. In addition, measurements indicate that incorporation of helium gas of 2.667 x 10(-2) Pa during deposition leads to a larger portion of (311) oriented grains and smaller coherent length for C-60 films on fluorophlogopite. Nevertheless, the (111) planes of (111) oriented C-60 grains are almost perfectly aligned and excellently parallel to the substrate surface. Moreover, the formation of larger crystal grains on silicon with a preferable(111) orientation occurs with introducing helium gas. Hot-wall, substrate type, temperature, and helium gas effects on film growth are discussed. (C) 1998 Elsevier Science S.A. All rights reserved.

Nucleation and Growth Characteristics of Metal Films on C 60 (111) Surface

Growth Of C-60 Single Crystal Films On Metal Substrates

Growth And Structure Of C(60) Thin-Films On Nacl, Glass And Mica Substrates

Growth of C-60(111) Single Crystalline Thin Film on Ni3co(111) Substrate

Growth of High-Quality C60(111) Single Crystalline Film on Ni3Co(111) Surface

Formation of (110) oriented layered silver nano-crystallites

Crystal-Growth of C-60 Thin-Films on Layered Substrates

C60 single crystal films on GaAs (001) surfaces

Adsorption and Film Growth of C-60 on the Gaas(001) 2x6 Surface by Molecular-Beam Epitaxy

Nucleation Of Endohedral Metallofullerene Nd@C-82 On C-60 Films

The (111) Oriented Growth of C60 Films on GaAs(100) Substrates

Preparing (111)-Oriented C-60 Crystalline Films On Nacl Substrate

Growth of Centimeter-Sized C60 Single Crystals

Synthesis and Characterization of Ag–C60 Nanostructure Film

Growth characteristics of C60 films on fluorophlogopite and silicon substrates

Crystal growth and structure of fullerene thin films

Diamond Nucleation on Surface of C 60 Thin Layers

Growth of Two-Dimensional C60 Nanoclusters Within a Propylthiolate Matrix

Sb Mediated C-60 Film Growth on Mica, Si, and Glass Substrates

Growing high-quality C60 films by using Sb buffer layer

Extraordinary growth of C60 on a GaAs(001) As-rich 2×4 surface