Abstract:The point-contact high-purity germanium detector (HPGe) has the advantages of low background, low energy threshold, and high energy resolution and can be applied in the detection of rare-event physics. However, the performance of HPGe must be further improved to achieve superior energy resolution, low noise, and long-term reliability. In this study, we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge. The surface passivation effect is calculated and inferred from the band structure and density of interface states, and further confirmed by the minority carrier lifetime. The first-principles method based on the density functional theory was adopted to systematically study the lattice structure, band structure, and density of state (DOS) of four different systems: Ge–H, Ge–Ge-NH2, Ge-OH, and Ge-SiOx. The electronic characteristics of the Ge (100) unit cell with different passivation groups and Si/O atomic ratios were compared. This shows that H, N, and O atoms can effectively reduce the surface DOS of the Ge atoms. The passivation effect of the SiOx group varied with increasing O atoms and Si/O atomic ratios. Experimentally, SiO and SiO2 passivation films were fabricated by electron beam evaporation on a Ge substrate, and the valence state of Si and resistivity was measured to characterize the film. The minority carrier lifetime of Ge-SiO2 is 21.3 μs, which is approximately quadruple that of Ge-SiO. The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density. This study builds a relationship between the passivation effect and different termination groups, and provides technical support for the potential passivation layer, which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.

Initial Reaction Mechanism of H-Passivated Ge Surface Passivation by Atomic Layer Deposition of Al2o3 and Aln

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi： Initial Surface Reaction Pathways with H/GeSi（100）-2 × 1

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Initial Surface Reactions in Atomic Layer Deposition of Al2O3on the Hydroxylated GaAs(001)-4 × 2 Surface

Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of Geoxny for Al/N-Ge(100) Contact

Atomic Layer-By-Layer Oxidation Of Ge (100) And (111) Surfaces By Plasma Post Oxidation Of Al2o3/Ge Structures

Effect of Chemical Surface Treatments on Interfacial and Electrical Characteristics of Atomic-Layer-deposited Al2O3 Films on Ge Substrates

Sulfur Passivation for the Formation of Si-terminated Al 2 O 3/ SiGe(0 0 1) Interfaces

Elemental Diffusion Study of Ge/Al2O3 and Ge/AlN/Al2O3 Interfaces Upon Post Deposition Annealing

Evaluation of the passivation effect and the first-principles calculation on surface termination of germanium detector

Analyzing the Surface Passivity Effect of Germanium Oxynitride: a Comprehensive Approach Through First Principles Simulation and Interface State Density

Ge Surface Passivation by GeO 2 Fabricated by N 2 O Plasma Oxidation

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) Interface Trap State Reduction Via In-Situ N-2/H-2 RF Downstream Plasma Passivation

Evidence of Layer-by-Layer Oxidation of Ge Surfaces by Plasma Oxidation Through Al2O3

Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3 films on GaAs substrates

Reaction mechanism of ZrCl4 with Ge/Si(100)-(2 × 1): A density functional theory study of initial stage of ZrO2 atomic layer deposition on SiGe alloy surface

Reaction Mechanism of ZrCl/sub 4/ with Ge/Si[100]-(2 X 1): a Density Functional Theory Study of Initial Stage of ZrO/sub 2/ Atomic Layer Deiposition on SiGe Alloy Surface

Ultrathin Geoxny Interlayer Formed By In Situ Nh3 Plasma Pretreatment For Passivation Of Germanium Metal-Oxide-Semiconductor Devices

Density Functional Theory Study of Initial Stage of ZrO2 Atomic Layer Deposition on Ge/Si(100)-(2×1) Surface