Abstract:Sodium beta-alumina（SBA） is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al 2 O 3 as the precursors.The X-ray diffraction（XRD） spectrum reveals that the deposited thin film is amorphous.The binding energy and composition of the deposited thin film,obtained from the X-ray photoelectron spectroscopy（XPS） measurement,are consistent with those of SBA.The dielectric constant of the SBA thin film is about 50.Each of the capacitance-voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN.The interface trap density of metal-insulator-semiconductor high-electron-mobility transistor（MISHEMT） is measured to be（3.5～9.5）×10 10 cm -2 ·eV -1 by the conductance method.The fixed charge density of SBA dielectric is on the order of 2.7×10 12 cm -2 .Compared with the AlGaN/GaN metal-semiconductor heterostructure high-electronmobility transistor（MESHEMT）,the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However,the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from—5.5 V to—3.5 V.From XPS results,the surface valence-band maximum（VBM-E F ） of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition.The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum （VBM-E F ）,the reduction of interface traps and the effects of sodium ions,and/or the fixed charges in SBA on the two-dimensional electron gas（2DEG）.

Sodium Beta-Alumina Thin Films As Gate Dielectrics for AlGaN/GaN Metal—insulator—semiconductor High-Electron-mobility Transistors

AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina As the Gate Dielectrics

Performance of an AlGaN/GaN MISHEMT with Sodium Beta-Alumina for Gate Insulation and Surface Passivation

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films

AlN/GaN Metal–insulator–semiconductor High-Electron-mobility Transistor with Thermal Atomic Layer Deposition AlN Gate Dielectric

O-3-Sourced Atomic Layer Deposition of High Quality Al2o3 Gate Dielectric for Normally-Off Gan Metal-Insulator-Semiconductor High-Electron-Mobility Transistors

The Modulation Effects of Charged Dielectric Thin Films on Two-Dimensional Electron Gas in Algan/Gan Heterostructure

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films

Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 Nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Atomic Layer Deposition of ZrO2 As Gate Dielectrics for AlGaN/GaN Metal-Insulator-semiconductor High Electron Mobility Transistors on Silicon

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Sodium Beta-Alumina Thin Films As Gate Dielectrics for AlGaN/GaN Metal—insulator—semiconductor High-Electron-mobility Transistors

AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina As the Gate Dielectrics

Performance of an AlGaN/GaN MISHEMT with Sodium Beta-Alumina for Gate Insulation and Surface Passivation

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films

AlN/GaN Metal–insulator–semiconductor High-Electron-mobility Transistor with Thermal Atomic Layer Deposition AlN Gate Dielectric

O-3-Sourced Atomic Layer Deposition of High Quality Al2o3 Gate Dielectric for Normally-Off Gan Metal-Insulator-Semiconductor High-Electron-Mobility Transistors

The Modulation Effects of Charged Dielectric Thin Films on Two-Dimensional Electron Gas in Algan/Gan Heterostructure

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Property of an AlGaN/GaN MIS Diode with Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;/Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Bilayer Gate Dielectric Films

Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 Nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Atomic Layer Deposition of ZrO2 As Gate Dielectrics for AlGaN/GaN Metal-Insulator-semiconductor High Electron Mobility Transistors on Silicon

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films