Abstract:In this paper, we present a systematic investigation of metal–organic chemical vapor deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The dielectric constant and breakdown field of the in situ SiN were extracted from devices with varied gate dielectric thicknesses. Using frequency-dependent capacitance–voltage and parallel conductance methods, we obtained a low trap density of $\sim 3\times 10^{12}$ cm $^{-2}$ eV $^{-1}$ at the SiN/AlGaN interface. The MISHEMTs with a source–drain distance of $3~\mu \text{m}$ show a maximum drain current of 1560 mA/mm and a high on/off current ratio of $10^{9}$ . The device threshold voltage ( ${V}_\textsf {th}$ ) stability was assessed by means of both negative and positive gate stress measurements, as well as temperature-dependent $ {I}_\textsf {D}$ – ${V}_\textsf{G}$ measurements. We observed a minimal $ {V}_\textsf{th}$ shift of ~0.4 V under both 3000 s gate stress of ${V}_\textsf {GS}= 4$ V and up to 200 °C thermal stimulation. Furthermore, combining the in situ SiN with plasma-enhanced chemical vapor deposition SiN, we developed a bilayer passivation scheme for effective suppression of current collapse. Employing the high-quality in situ SiN, we have demonstrated large-area GaN MISHEMTs on Si with a gate width of 20 mm, showing a low off-state leakage of $2~\mu \text{A}$ /mm at 600 V and a low dynamic/static ON-resistance ratio. The device results show great advantages of employing in situ SiN in D-mode GaN MISHEMTs for high-efficiency power switching applications.

Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina As the Gate Dielectrics

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Sodium Beta-Alumina Thin Films As Gate Dielectrics for AlGaN/GaN Metal—insulator—semiconductor High-Electron-mobility Transistors

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films

Performance of an AlGaN/GaN MISHEMT with Sodium Beta-Alumina for Gate Insulation and Surface Passivation

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric

Investigation of the Interface Between LPCVD-SiNx Gate Dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric

Al(ON) Gate Dielectrics for 4H-Sic MOS Devices

Impact of Ald Gate Dielectrics (sio2, Hfo2, and Sio2/Hah) on Device Electrical Characteristics and Reliability of Algan/Gan Moshfet Devices

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ As Gate Dielectric

Atomic Layer Deposition of ZrO2 As Gate Dielectrics for AlGaN/GaN Metal-Insulator-semiconductor High Electron Mobility Transistors on Silicon

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina As the Gate Dielectrics

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Sodium Beta-Alumina Thin Films As Gate Dielectrics for AlGaN/GaN Metal—insulator—semiconductor High-Electron-mobility Transistors

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Property of an AlGaN/GaN MIS Diode with Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt;/Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Bilayer Gate Dielectric Films

Performance of an AlGaN/GaN MISHEMT with Sodium Beta-Alumina for Gate Insulation and Surface Passivation

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric

Investigation of the Interface Between LPCVD-SiNx Gate Dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

High-performance GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N/SiNX as composite gate dielectric

Al(ON) Gate Dielectrics for 4H-Sic MOS Devices

Impact of Ald Gate Dielectrics (sio2, Hfo2, and Sio2/Hah) on Device Electrical Characteristics and Reliability of Algan/Gan Moshfet Devices

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ As Gate Dielectric

Atomic Layer Deposition of ZrO2 As Gate Dielectrics for AlGaN/GaN Metal-Insulator-semiconductor High Electron Mobility Transistors on Silicon

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Property of an AlGaN/GaN MIS Diode with Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub> Bilayer Gate Dielectric Films