Abstract:In this present work, we applied Taguchi’s plan of experimentation as a numerical tool to develop a TiO2 gas sensor. This plan permits us to reduce the number of experimentations and obtain the optimal conditions of factors involved in the development of the sensitive layer. The focal concept is to optimize the TiO2 thin film conductivity by using an L9 (33) orthogonal array based on three important factors of spray pyrolysis deposition (A, concentration of [Ti4+]; B, deposition temperature; and C, spray pyrolysis time). These factors are varied to select the best deposition conditions and to obtain the best conductivity of TiO2 thin films. From the calculation of signal-to-nose ratio (S/N) and the analysis of variance (ANOVA) based on the conductivity values of thin films, the optimal combination of factors is A2B3C3, which corresponds to the concentration [Ti4+] = 0.3 kmol/m3, the deposition temperature T = 500°C and the spray time = 15 min. The validation test confirmed that this combination of deposition parameters is the most optimal to improve the most important TiO2 thin film properties. X-ray diffraction shows a high privileged direction along the (101) plane, large crystallite size of 21.43 nm and low dislocation density of 2.17 × 10−3 nm−2. The Raman modes located at 143 cm−1, 391 cm−1, 512 cm−1 and 633 cm−1 confirmed the purity of anatase TiO2. The images of scanning electron microscopy showed the growth of compact and granular film with an average of grain size of 66.76 nm. The optical analysis showed a transparent semiconductor with large band gap of 3.33 eV. The electrical measurement displayed a good conductivity of TiO2 equal to 280.06 × 10−6 (S m−1). These outcome properties make TiO2 thin film an attractive material for gas sensor applications.

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