Abstract:Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm ZnGa_2O_4$ may be suitable for these applications, standing out as an alternative to $\rm Ga_2O_3$. The simple face centered cubic spinel structure of $\rm ZnGa_2O_4$ results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the $\beta$-monoclinic $\rm Ga_2O_3$. In addition, $\rm ZnGa_2O_4$ has shown, on average, better thermal dissipation and potential for $n$- and $p$-type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of $\rm ZnGa_2O_4$, focusing on the possibility for $n$- and p-type conductivity. We find that the cation antisite $\rm Ga_{Zn}$ is the lowest energy donor defect that can lead to unintentional $n$-type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve $p$-type conductivity. However, with excess of Zn, forming $\rm Zn_{(1+2x)}Ga_{2(1-x)}O_4$ alloys display an intermediate valence band, facilitating $p$-type conductivity. Due to the localized nature of this intermediate valence band, $p$-type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments.

Modulation Of Band Structure In Wurtzite Zno Via Site-Selective Ga-N Codoping

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

First-Principles Investigation on Ag, N Codoped in P-Type ZnO

Charged States and Band-Gap Narrowing in Codoped ZnO Nanowires for Enhanced Photoelectrochemical Responses

Electronic structures of Zn1-xGaxO1-xNx and band offsets of the ZnO/Zn1-xGaxO1-xNx heterojunction across the entire concentration range from first principles

Fermi-Level Band Filling and Band-Gap Renormalization in Ga-Doped Zno

Ag-2N High Concentration Codoping p-ZnO for LED

Electronic structures of Zn 1− x Ga x O 1− x N x and band offsets of the ZnO/Zn 1− x Ga x O 1− x N x heterojunction across the entire concentration range from first principles

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Large Bandgap Tunability Of Gan/Zno Pseudobinary Alloys Through Combined Engineering Of Anions And Cations

Investigation of the electronic structure of two-dimensional GaN/Zr2CO2 hetero-junction: Type-II band alignment with tunable bandgap

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

Effect of Cu doping on the electronic structure, magnetic and optical properties of GaN/ZnS heterojunctions: a first-principles study

Electron Energy Loss Spectroscopy and First-Principles Study of GaN Via Zn Doping

Electronic Structures and Optical Properties of GaN Nanotubes with MgGa–ON Co-Doping

Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.

Doping and strain modulation of the electronic,optical and photocatalytic properties of GaN/C2N heterostructure

Electronic Structures of Wurtzite Gan with Ga and N Vacancies

Electronic structure and magnetic properties of the N monodoping and (Li, N)-codoped ZnO

Band Gap and Electronic Properties of Wurtzite-Structure ZnO Co-Doped with IIA and IIIA

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain