Abstract:The fascinating realm of silicon quantum dots (Si QDs) has attracted considerable attention for their exceptional optical characteristics and potential applications in the optoelectronic industry. However, there remains a scarcity of research that directly compares the impacts of diverse surface modification methods on the electronic structure and charge transfer properties of Si QD nanomaterials. Considering this scientific challenge, we employ the first-principle calculations to conduct the following investigations. To begin, we have innovatively introduced the concept of the adjacent coordination number (ACN) to establish a quantitative correlation between the band gap (Eg) and the doping sites of boron (B) atoms across various sizes of Si QDs. Additionally, a combination of Total Density of States (TDOS), Partial Density of States (PDOS) and orbital component analysis reveals that the subtle dipole effect near the B-doping site significantly contributes to the reduction in the band gap, providing valuable insights into the complex impact of different doping sites on the electronic arrangement and structure of Si QDs. Ultimately, our absorption spectroscopy, charge transfer and Quantum Theory of Atoms in Molecules (QTAIM) analysis of organic molecule coupling Si QDs reveal the formation of dipoles on the surface and the correlation between charge migration direction and binding sites. This phenomenon not only amplifies the presence of conjugated coupling states but also significantly enhances the charge transfer capability of Si QDs. These valuable insights will provide significant advantages to scientists and researchers endeavoring to tailor the electronic structure and optical attributes of Si QDs using a diverse array of modification techniques to meet specific application requirements. The surface functionalization of Si QDs involves doping or coupling site selection and the establishment of charge transfer bridges is crucial for the formation of dipole–dipole interaction which may not only play a role in regulating band gap structures but also exert significant control over the charge transfer capacity of Si QDs.

Modulating the Optical and Electronic Properties of Highly Symmetric Si Quantum Dots.

Tuning Quantum Dot States with Optical Fields

Synthesis, Optical Properties And Theoretical Modelling Of Discrete Emitting States In Doped Silicon Nanocrystals For Bioimaging

Effect of Small Shape Changes on the Optical Response of Highly Symmetric Silicon Quantum Dots

Tunability of Size, B Doping and Organic Molecular Coupling to Electronic and Optical Properties of Silicon Quantum Dots

A theoretical study of the electronic properties of hydrogenated spherical‐like SiC quantum dots with C ‐rich and Si ‐rich compositions

Bandgap Tuning of Silicon Quantum Dots by Surface Functionalization with Conjugated Organic Groups

New symmetric families of silicon quantum dots and their conglomerates as a tunable source of photoluminescence in nanodevices

Physics of Lateral Triple Quantum-Dot Molecules with Controlled Electron Numbers

Band Modulation for Silicene and Graphene Quantum Dots: A First-Principles Calculation

Manipulations of Electronic and Spin States in Co-Quantum Dot/WS2 Heterostructure on a Metal-Dielectric Composite Substrate by Controlling Interfacial Carriers.

A first-principles study of the electronic, vibrational, and optical properties of planar SiC quantum dots

Electrical manipulation of an electronic two-state system in Ge/Si quantum dots

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Electronic Correlations in Multielectron Silicon Quantum Dots

Symmetries and optical transitions of hexagonal quantum dots in GaAs/AlGaAs nanowires

Electronic States and Shapes of Silicon Quantum Dots

The Structures and Properties of Si/SiO2 Core/shell Quantum Dots Studied by Density-Functional Tight-Binding Calculations

Self-Trapped Exciton And Large Stokes Shift In Pristine And Carbon-Coated Silicon Carbide Quantum Dots

Quantum Dots in Transition Metal Dichalcogenides Induced by Atomic-Scale Deformations

Electronic states and curved surface effect of silicon quantum dots