Abstract:Atomic phase coherence (quantum interference) in a multilevel atomic gas exhibits a number of interesting phenomena. Such an atomic quantum coherence effect can be generalized to a quantum-dot molecular dielectric. Two quantum dots form a quantum-dot molecule, which can be described by a three-level.-configuration model {vertical bar 0 >, vertical bar 1 >, vertical bar 2 >}, i.e., the ground state of the molecule is the lower level vertical bar 0 > and the highly degenerate electronic states in the two quantum dots are the two upper levels vertical bar 1 >, vertical bar 2 >. The electromagnetic characteristics due to the vertical bar 0 >-vertical bar 1 > transition can be controllably manipulated by a tunable gate voltage (control field) that drives the vertical bar 2 >-vertical bar 1 > transition. When the gate voltage is switched on, the quantum-dot molecular state can evolve from one steady state (i.e., vertical bar 0 >-vertical bar 1 > two-level dressed state) to another steady state (i.e., three-level coherent-population-trapping state). In this process, the electromagnetic characteristics of a quantum-dot molecular dielectric, which is modified by the gate voltage, will also evolve. In this study, the transient evolutional behavior of the susceptibility of a quantum-dot molecular thin film and its reflection spectrum are treated by using the density matrix formulation of the multilevel systems. The present field-tunable and frequency-sensitive electromagnetic characteristics of a quantum-dot molecular thin film, which are sensitive to the applied gate voltage, can be utilized to design optical switching devices.

Quantum Dots in Transition Metal Dichalcogenides Induced by Atomic-Scale Deformations

Tuning Quantum Dot States with Optical Fields

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

Optically Active Quantum Dots in Monolayer WSe$_2$

Quantum phase transition in a single-molecule quantum dot

Single Electron Quantum Dot in Two-Dimensional Transition Metal Dichalcogenides

Optical Signatures of Defect Centres in Transition Metal Dichalcogenide Monolayers

Self-organised quantum dots in marginally twisted MoSe$_2$/WSe$_2$ and MoS$_2$/WS$_2$ bilayers

Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides

The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)

Molecular Collapse States in Heterostructure Quantum Dots

Emergence of new optical resonances in single-layer transition metal dichalcogenides with atomic-size phase patterns

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Strain-induced bound states in transition-metal dichalcogenide bubbles

Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface

Quantum Confined Luminescence in Two dimensions

Confined Electron and Hole States in Semiconducting Carbon Nanotube sub-10 nm Artificial Quantum Dots

Quantum dots on the InAs(110) cleavage surface created by atom manipulation

Quantum defects in 2D transition metal dichalcogenides for THz-technologies

A Gate Defined Quantum Dot on the Two-Dimensional Transition Metal Dichalcogenide Semiconductor WSe2

Ultrafast Field-driven Valley Polarization of Transition Metal Dichalcogenide Quantum Dots