Abstract:The determination of stopping powers for slow heavy ions in targets containing light elements is important to accurately describe ion–solid interactions, evaluate ion irradiation effects and predict ion ranges for device fabrication and nuclear applications. Recently, discrepancies of up to 40% between the experimental results and SRIM (Stopping and Range of Ions in Matter) predictions of ion ranges for heavy ions with medium and low energies (<∼25keV/nucleon) in light elemental targets have been reported. The longer experimental ion ranges indicate that the stopping powers used in the SRIM code are overestimated. Here, a molecular dynamics simulation scheme is developed to calculate the ion ranges of heavy ions in light elemental targets. Electronic stopping powers generated from both a reciprocity approach and the SRIM code are used to investigate the influence of electronic stopping on ion range profiles. The ion range profiles for Au and Pb ions in SiC and Er ions in Si, with energies between 20 and 5250keV, are simulated. The simulation results show that the depth profiles of implanted ions are deeper and in better agreement with the experiments when using the electronic stopping power values derived from the reciprocity approach. These results indicate that the origin of the discrepancy in ion ranges between experimental results and SRIM predictions in the low energy region may be an overestimation of the electronic stopping powers used in SRIM.

Depth Profiles of MeV Heavy Ions Implanted into Si and Lithium Triborate

Mean projected range and range straggling of Bi+ ions implanted into lithium triborate

Longitudinal and transverse moments of the distribution of MeV Ti ions implanted in Si measured by SIMS

Range Straggling and Lateral Spread of Mev Au+ Ions in Lib3o5 and Sin1.375h0.603

Projected Range, Range Straggling and Lateral Spread of 2.0 MeV Au+ Ions Implanted into Si

Concentration Profile of MeV Ni+ Ions in LiNbO3 and KTiOPO4 Determined by SIMS

Depth Distributions of Bi+ Ions Implanted into Ni, Si and SiO₂, Films

The Mean Projected Range and Range Straggling of Xe Ions Implanted in Si and Si1N1.375H0.603

Two-dimensional distributions of Xe ions implanted in Si3N4 films

Three-Dimensional Range Distribution of 400 Kev Nd Ions Implanted into Si

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Damage Profiles in Silicon Tilt Angles Bombarded by High Energy Cu Ions

Range and Annealing Behaviour of Pb+ Ions Implanted into Linbo3 Crystals at Moderate Energies

Depth Distributions of Heavy-Ions in Linbo3 and Ktiopo4 at Tilted Angle Implantation

Molecular Dynamics Simulations of Ion Range Profiles for Heavy Ions in Light Targets

Implanted Dopant and Associated Damage Profile in MeV 166er+ Implanted Silicon

On the SRIM prediction of ranges for Ni ions

Simulation of the Distribution of Incident Ions and Depth Profile in Plasma-Based Ion Implanted Layers with Different Pulse Width

Lattice Disorder in Linbo3 Crystals Induced by Mev Cu+ Implantation

Depth profile and annealing behavior study of 350 keV Bi+ ions implanted into LiNbO3

Investigation of Depth Distributions of Defects in Si Created by High Energy Ti Ions