Abstract:Electrical characterization of semiconducting oxide nanowires (NWs) is mostly performed using complex techniques, which necessitates a series of costly nanofabrication procedures. In this work, with the aim to provide a low-cost, feasible, facile, and reproducible approach for enabling the study of NW electrical properties, we report direct electrical measurements on individual and overlapped suspended zinc oxide NWs (ZnO NWs). We have succeeded in constructing both two- and three-terminal devices simply by employing tungsten (W) nanoprobes with the aid of a nanomanipulation system embedded inside a scanning electron microscope’s vacuum chamber. Stable contacts were established using the Joule heating effect and e-beam exposure at the junctions between the NW and the pre-cleaned W tips. P-channel field-effect transistor devices were achieved with an on–off current ratio of ∼101, a threshold voltage (>1.5 V), a transconductance of ∼16 μS, a sub-threshold swing of ∼220 mV/decade, and field-effect carrier mobility roughly estimated to be around 926.4 cm2/(V·s) after correction for contact resistances/optimization. The average resistivity of ZnO NWs was calculated to be ∼2.23 × 10–2 Ω·cm for NWs with diameters between 70 and 500 nm. Besides, we have demonstrated a contact resistance of ∼19.60 kΩ and a Schottky barrier height of ∼0.37 eV present at W/ZnO NW interfaces. The contact resistance between two overlapped ZnO NWs was estimated to be ∼283 kΩ, which is relatively higher than that offered between W/ZnO NWs. This work provides a solid experimental procedure to address true intrinsic electrical properties at metal/semiconductor interfaces, and our findings have potential applications in next-generation 3D suspended ZnO NW-based nanoelectronic devices.

Manipulation and Four‐probe Analysis of Nanowires in UHV by Application of Four Tunneling Microscope Tips: a New Method for the Investigation of Electrical Transport Through Nanowires

Current-voltage Characteristics and Parameter Retrieval of Semiconducting Nanowires

Intrinsic Current-Voltage Properties Of Nanowires With Four-Probe Scanning Tunneling Microscopy: A Conductance Transition Of Zno Nanowire

Methodology for Measurement of Submicron Metallic Wire's Local Electrical Conductivity by Applying Four-points AFM Probe Technique

In situ transmission electron microscope studies on one-dimensional nanomaterials: Manipulation, properties and applications

CHARACTERIZATION AND MANIPULATION OF NANOSTRUCTURES BY A SCANNING TUNNELING MICROSCOPE

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

In situ nanomechanical measurement of Cu nanowires

Contacting Nanowires and Nanotubes with Atomic Precision for Electronic Transport

Two-probe Electrical Measurements in Transmission Electron Microscopes--behavioral Control of Tungsten Microwires

Probing Electronic Transport of Individual Nanostructures with Atomic Precision

Defect-concentration dependence of electrical transport mechanisms in CuO nanowires

Four-Probe Scanning Tunnelling Microscope with Atomic Resolution for Electrical and Electro-Optical Property Measurements of Nanosystems

In situ measurements on individual thin carbon nanotubes using nanomanipulators inside a scanning electron microscope

Measuring the Electrical Characteristics of Individual Junctions in the SnO2 Capped ZnO Nanowire Arrays on Zn Substrate

Contactless Probing of the Intrinsic Carrier Transport in Single-Walled Carbon Nanotubes

Probing Electrical Transport in Nanomaterials: Conductivity of Individual Carbon Nanotubes

Real-Time Visualization of Solid-Phase Ion Migration Kinetics on Nanowire Monolayer.

Whole-journey Nanomaterial Research in an Electron Microscope: from Material Synthesis, Composition Characterization, Property Measurements to Device Construction and Tests

A three-probe method for accurate nanoscale thermal transport measurements

Measuring Electronic Transport in a Single Carbon Nanotube Inside the SEM