Abstract:A successful growth of Cd0.9Mn0.1Te (CMT) ingot (vanadium doping concentration of 1 x 10(17) atoms/cm(3)) was achieved by using the Tellurium (Te) solution vertical Bridgman method. Using diffraction in the transmission electron microscope (TEM), the cell parameter of grown crystal was reckoned at 0.6496 nm. The [1 1 (2) over bar] zone-axis diffraction pattern (DP) was obtained and indexed as the (1 1 1), the (1 (3) over bar (1) over bar), the (2 (2) over bar 0) and the ((3) over bar 1 (1) over bar), respectively. Bright field (BF) image of the [1 1 (2) over bar] zone-axis showed bend contours which caused by the lattice planes physically rotate and the lattice defects. A screw dislocation was assigned according to the changes characteristic of the bend contour when crossing the 1 (3) over bar (1) over bar bend contour. And by imaging technique of high-resolution TEM (HRTEM), an edge dislocation and a set of stacking faults were recognized in the interfaces between Te precipitates and CMT: V. Then through the selected area diffraction (SAD) method, an array of rod-shape monoclinic-phase Te precipitates was identified parallel to the [1 (1) over bar 0] direction, i.e. the slip direction of the dislocation. The [1 0 0] zone-axis diffraction spots of the Te precipitates were superimposed on the [(1) over bar 1 2] zone-axis of CMT: V. 020 spot of the Te precipitates was a double diffraction spot produced by interactions of the Te precipitates and CMT: V reflections. Moreover, the results indicated the moire fringes were formed in the area of misfitted and rotational lattices of the Te precipitates and CMT: V. They were interference interactions which magnified the differences of lattice spacing and relative orientation.

Study on Defects in Cd1-xMnxTe Crystals Grown by Vertical Bridgman Method

Characterization of CdMnTe Crystal Grown with Vertical Bridgman Method under Te‐rich Conditions

Study on Cd_(0.9)Mn_(0.1)Te Growth Behavior by Te Solvent-Bridgman Method

Microstructure and Electrical Characterization of In-Doped Cd0.9mn0.1te Crystal Grown by the Vertical Bridgman Method

Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal

Growth and properties of Cd0.8Mn0.2Te crystal

Crystal growth and characterization of Cd0.8Mn0.2Te using Vertical Bridgman method

Investigation of Point Defects and Electrical Properties of the In-doped CdMnTe Grown by Traveling Heater Method

Dislocations and Te Precipitates of Cd0.9Mn0.1Te: V Crystal Grown by Tellurium Solution Vertical Bridgman Method

Infrared transmission of Cd1-xMnxTe crystal

Growth Interface of In-doped CdMnTe from Te Solution with Vertical Bridgman Method under ACRT Technique

Twins in CdMnTe single crystals grown by Bridgman method

Defects in CdMnTe Crystals for Nuclear Detector Applications

Correlation Between the X Value and Qualities of Cd1−xZnxTe Crystal Grown by Vertical Bridgman Method

Growth of Cd1−xZnxTe Crystals with Different X Values and Their Qualities Comparison

Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique

Correlation of Dislocations and Te Inclusions in Detector-Grade Cdznte Crystals Grown by Mvb Method

Distinctive Distribution of Defects in CdZnTe:In Ingots and Their Effects on the Photoelectric Properties

Analysis of Te Precipitates in Cd_(0.8) Mn_(0.2) Te Single Crystal Growing by Vertical Bridgman Method

Vertical Bridgman Growth and Characterization of Cdmnte Substrates for Hgcdte Epitaxy

Effects of Crystal Growth Methods on Deep-Level Defectsand Electrical Properties of CdZnTe:In Crystals