An Improved Configuration of Reflective-Type Electro-Optic Modulator with High Light-Induced Damage Threshold

XX Deng,ZQ Cao,QS Shen,PF Zhu,F Zhou,YQ Shen,JM Hao,L Qiu
DOI: https://doi.org/10.1016/j.optcom.2004.07.046
IF: 2.4
2004-01-01
Optics Communications
Abstract:A high light-induced damage threshold attenuated-total-reflection modulator is fabricated by replacing the metal film with poly(methyl methacrylate) as coupling layer, and the optimum conditions of the device are analyzed by calculating the reflectivity of a prism-waveguide configuration. The light-induced damage thresholds as high as ∼4 W/cm2 and ∼0.2 MW/cm2 for CW laser and ns pulses, respectively, are obtained. The device offers potentials in wireless optical communication for long distance transmission and applications in ultrashort laser systems such as energy balance, mode-locking or Q-switching.
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