Abstract:Using first-principles methods we studied structural and electronic properties of asymmetric heterogeneous $X\text{-Si}$ ($X=\text{Ge}$, Sn, and Pb) dimers on the Si(001) surface and their scatterings for the quasi-one-dimensional ${\ensuremath{\pi}}^{\ensuremath{\ast}}$ electrons. The $X\text{-Si}$ dimer with impurity atom $X$ at the lower position scatters more strongly the ${\ensuremath{\pi}}^{\ensuremath{\ast}}$ electrons than that with $X$ at the upper position. Calculated scattering potentials can be qualitatively explained by the difference in $p$-orbital energy between Si and the lower atom of the $X\text{-Si}$ dimer. We predict that the amplitude of electronic standing waves changes significantly between the two oppositely buckled $X\text{-Si}$ dimers in differential conductance images of scanning tunneling microscopy. This suggests the possibility of fabricating atomic switches to control the conduction of ${\ensuremath{\pi}}^{\ensuremath{\ast}}$ electrons along the dimer row. Our proposed atomic switches could be achieved by flipping the impurity dimers on the Si(001) surface using the method developed in recent experiments [K. Sagisaka et al., Phys. Rev. Lett. 91, 146103 (2003)]. Finally, we proposed the model for dimer-flipping mechanism, which can explain previous experiment [K. Sagisaka and D. Fujita, Phys. Rev. B 71, 245319 (2005)].

Effect of the Dimer Structure on Indium Adsorption and Diffusion on A Gasb Surface

Theoretical Investigation on the Inert Pair Effect of Ga on Both the Ga-Ni-Mo-S Nanocluster and the Direct Desulfurization of 4,6-Dimethyldibenzothiophene

First-principles Study of Indium Adsorption on GaP(001)(2×1) Surface

Adsorption, Diffusion, And Site Exchange For Ge Ad-Dimers On Sb-Covered Si(001) From First-Principles Total-Energy Calculations

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

A surface and interface study on the InSb/GaAs heterostructures

Adsorption of Indium on a InAs wetting layer deposited on the GaAs(001) surface

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Electronic Structure and Trilayer Growth of Indium Films on Si(111): a Photoemission Study

Strain Effect on Adatom Binding and Diffusion in Homo- and Heteroepitaxies of Si and Ge on ( 001) Surfaces.

Adsorption and Tunneling of Atomic Scale Lines of Indium and Lead on Si(100)

Electron Energy Loss Spectroscopy, Low Energy Electron Diffraction, and Auger Electron Spectroscopy Study of Indium Overlayers on Si(111) and Si(100) Surfaces

Morphology, chemistry, and band bending at Ag– and In–(100)GaSb interfaces

STM studies of initial In growth on Si(100)2 × 1: the In ad-dimer chain and its I-V characteristics

First-principles Study of Sb Adsorption on Ag(110)(2×2)

Surfactant Antimony enhanced Indium incorporation on InGaN (000-1) surface: a DFT study

Structural and Electronic Properties of Ge-Si, Sn-Si, and Pb-Si Dimers on Si(001) from Density-Functional Calculations

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

Effect of Antimony Ambience on the Interfacial Misfit Dislocations Array in A Gasb Epilayer Grown on A Gaas Substrate by Mocvd

The adsorption of In on the surface of (001) CdTe

Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate