Abstract:Lead zirconate titanate (PZT) thin films were fabricated by adding 15 mol.% excess of Pb to the starting solution and spin coating onto Pt/Ti/SiO2/Si and Ir/IrO2/SiO2/Si substrates. The effect of bottom electrodes on the microstructures, crystalline phases and electrical properties of the PZT thin films was investigated. It was found that the films deposited on Pt/Ti bottom electrode consisted of perovskite phase without pyrochlore phase, whereas the films deposited on the Ir/IrO2 bottom electrode consisted of mainly perovskite phase with a small amount of pyrochlore phase. Bottom electrodes were also found to influence the preferred orientation and microstructure as well as the surface morphology of the PZT films. The Pt/Ti bottom electrode favored a (100) orientation and fine-grained structure as well as a smooth surface, whereas the Ir/IrO2 bottom electrode favored a random orientation, non-uniform structure and rough surface. High-resolution electron microscopy observation reveals that there is an intermediate layer of IrO2 at the PZT/Ir interface. This indicates that the intermediate layer of IrO2 influenced the orientation and microstructure of the PZT films on the Ir/IrO2 bottom electrode. Ferroelectricity was investigated by observing the polarization hysteresis loops. The remanent polarization and saturation polarization of the PZT films on the Ir/IrO2 bottom electrode were smaller than those of the PZT films on the Pt/Ti bottom electrode. The difference between the dielectric and the ferroelectric properties in these PZT films was correlated to their crystalline phases and microstructure.

The Thickness Effect of Pzt19 in Pzt19/Ptzt/Pzt19 Thin Film

THE EFFECT OF SEEDING LAYERS ON FERROELECTRIC PROPERTIES OF PTZT THIN FILMS

Optimization of Seed Layer of PbTiO3/PbZr0.3Ti0.7O3/PbTiO3 Sandwich Structure Ferroelectric Thin Film

Effect of Excess Pb in PbTiO 3 Precursors on Ferroelectric and Fatigue Property of Sol–gel Derived PbTiO 3 /pbzr 0.3 Ti 0.7 O 3 /pbtio 3 Thin Films

Thickness Dependence of Ferroelectric and Optical Properties in Pb(Zr0.53Ti0.47)O-3 Thin Films

Effect of Excess Pb in Pt Layers on Microstructure and Dielectric Characteristic of Pt/Pzt/Pt Thin Films

PZT FERROELECTRIC THIN FILMS PREPARED BY SPUTTERING AT PURE OXYGEN AND HIGH PRESSURE

Preparation and Ferroelectric Properties of PZT Multilayer Film

THE THICKNESS EFFECT OF BTO IN BTO/BLTZ0.20/BTO THIN FILMS PREPARED BY RF-MAGNETRON SPUTTERING

Investigation on the Effects of PbO Content and Seeding Layers of TiO2 and ZrO2 on the Orientation and Microstructure of Pb(Zr0.52Ti0.48)O3 Ferroelectric Films Grown by Reverse Dip-Coating Method of Sol–gel

Thickness Effect on Electrical Properties of Pb(Zr0.52Ti0.48)O3 Thick Films Embedded with ZnO Nanowhiskers Prepared by a Hybrid Sol–gel Route

Characterization of PZT/PT Multilayer Thin Film by Sol–gel

Thickness dependence of PbZr0.52Ti0.48O3 thin film ferroelectric parameters

Effect of Bottom Electrodes on Microstructures and Electrical Properties of Sol–gel Derived Pb(Zr0.53 Ti0.47)O3 Thin Films

Thickness-dependent Electrical Properties of Sol–gel Derived Pb(Zr 0.52 Ti 0.48 )O 3 Thick Films Using PbTiO 3 Buffer Layers

Enhanced Dielectric and Piezoelectric Properties of RF Sputtered Pb(Zr0.60,Ti0.40)O3 Thin Films Deposited on Sol-Gel Derived Pb1+x(Zr0.40,Ti0.60)O3 Seed Layer with Various Lead Contents

The Optimization of Excess Pb Content in Sol-Gel Deposited Sandwich Structure Pbtio3/Pbzr0.3ti0.7o3/Pbtio3 Thin Films

Thickness effects on structures and electrical properties of lead zirconate titanate thick films

Effects of Pzt Buffer Layers on Pzfnt Ferroelectric Thin Films

Enhanced ferroelectric properties of Pb(Zr0.80Ti0.20)O3/PbO thin films prepared by radio frequency magnetron sputtering

Effect of thickness on microstructure and electrical properties of PZT films prepared by a modified Sol-Gel method