OH~- adsorption and desorption mechanism on Si(100) surface

Qi Qi,Wang Yuqiao,Song Kunzhong,Wang Juan,Sun Yueming
2007-01-01
Abstract:Adsorption process and desorption process of OH- on Si(100)surface were analyzed using Hartree-Fock module in Gaussian 98 package.In the calculation OH- attacks in direct and tilted way at three possible positions(top,bridge,hollow)on Si(100)surface.Meanwhile,at every specified site it is kept in the least steric hindrance and in the most favorable bonded direction.Calculations show that the most favorable position is the top silted site,the last is the hollow site.Calculations of the reaction energy curves of the attacking process of OH-towards Si(100) surface show that the activation energy is about 0,and the activation energy for the process of a single Si atom being pulled away from the top tilted site by OH-is about 1.01 eV,and the activation energy of the whole process containing adsorption and desorption is about 3.29 eV.
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