Theory of the 2 X 2 and 3 X 3 Reconstructions of the Α-Sn(111) Surface

Zhong-Yi Lu,G. L. Chiarotti,S. Scandolo,E. Tosatti

DOI: https://doi.org/10.1007/bf03185506

1998-01-01

Abstract:Two main reconstructions have been reported for the α-Sn (111) surfaces (epitaxially grown on InSb(111)), namely 2 x 2 and a metastable 3 x 3. We discuss the possible nature of these reconstructions, based on first-principles electronic structure calculations carried out in our group. The lowest surface energy is attained by an “adatom-restatom”(AR) reconstruction, whose basic building block can be either c(4 x 2) or 2 x 2, analogous to those of Si(111)7 x 7, and of Ge(111)c(2 x 8). We thus propose that Sn(111)2 x 2 could be explained by the AR model, and we compute surface core level shifts, as a prediction for future experiments. For the 3 x 3, the scenario appears less obvious, and we consider two different models: a dimer-adatom-stacking fault (DAS) model and a distorted\(\sqrt 3 \times \sqrt 3 \), inspired by existing Charge-Density-Wave (CDW) distorted surfaces. Both models yield a higher surface energy when compared to the 2 x 2 AR, the DAS only slightly worse than the other. Thus the nature of the metastable 3 x 3, possibly a result of growth kinetics, remains an open issue.