Atomic and electronic structure of ideal and reconstructedα-Sn (100) surfaces

Zhong-Yi Lu,Guido L. Chiarotti,S. Scandolo,E. Tosatti

DOI: https://doi.org/10.1103/physrevb.58.13698

1998-01-01

Physical Review

Abstract:$\ensuremath{\alpha}$-Sn(100) surfaces have been recently produced through epitaxial growth of Sn on InSb (100). Reflection high-energy electron-diffraction data on these surfaces exhibit a variety of reconstructions with periodicities $2\ifmmode\times\else\texttimes\fi{}1,p(2\ifmmode\times\else\texttimes\fi{}2),$ and $c(4\ifmmode\times\else\texttimes\fi{}4),$ attributed to possible ordering of dimers, in analogy to Si(100) and Ge(100) surfaces. Here we present a theoretical study of $\ensuremath{\alpha}$-Sn(100) using the ab initio pseudopotential local-density approximation to search for the stable atomic and electronic structure. We find that surface dimers indeed form, accompanied by a large energy gain of 0.618 eV/(surface atom) with respect to the ideal surface. As in Si and Ge, the dimer is buckled, but in $\ensuremath{\alpha}$-Sn the amount of buckling is surprisingly large, 1.0 \AA{}, to be compared with 0.4 \AA{} (Si) and 0.74 \AA{} (Ge). A frozen phonon calculation predicts a corresponding surface dimer rocking mode at 4.8 THz. The surface core-level shift was found to be 0.6 eV for the up-dimer atom. In the ground state of $\ensuremath{\alpha}$-Sn(100) we find that dimers tend to order ``antiferromagnetically.'' Calculations show that the most favored states with asymmetric buckled dimers are the $c(4\ifmmode\times\else\texttimes\fi{}2)$ and $p(2\ifmmode\times\else\texttimes\fi{}2)$ antiferro reconstructions, found to be nearly degenerate. Results are discussed in connection with existing and future experiments.