Atomic And Electronic Structure Of Ideal And Reconstructed Alpha-Sn (100) Surfaces

Zhong-Yi Lu,Guido L. Chiarotti,S. Scandolo,E. Tosatti
DOI: https://doi.org/10.1103/PhysRevB.58.13698
IF: 3.7
1998-01-01
Physical Review B
Abstract:alpha-Sn(100) surfaces have been recently produced through epitaxial growth of Sn on ZnSb (100). Reflection high-energy electron-diffraction data on these surfaces exhibit a variety of reconstructions with periodicities 2 x 1, p(2 x 2), and c(4 x 4), attributed to possible ordering of dimers, in analogy to Si(100) and Ce(100) surfaces. Here we present a theoretical study of alpha-Sn(100) using the ab initio pseudopotential local-density approximation to search for the stable atomic and electronic structure. We find that surface dimers indeed form, accompanied by a large energy gain elf 0.618 eV/(surface atom) with respect to the ideal surface. As in Si and Ge, the dimer is buckled, but in alpha-Sn the amount of buckling is surprisingly large, 1.0 Angstrom, to be compared with 0.4 Angstrom (Si) and 0.74 Angstrom (Ge). A frozen phonon calculation predicts a corresponding surface dimer rocking mode at 4.8 THz. The surface core-level shift was found to be 0.6 eV for the up-dimer atom. In the ground state of alpha-Sn(100) we find that dimers tend to order "atniferromagnetically." Calculations show that the most favored states with asymmetric buckled dimers are the c(4 x 2) and p(2 x 2) antiferro reconstructions, found to be nearly degenerate. Results are discussed in connection with existing and future experiments. [S0163-1829(98)06143-8].
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