Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Growth Mechanism of Truncated Triangular III-V Nanowires.

Growth Mechanism of Truncated Triangular GaAs Nanowires

Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition

3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

Growth and Properties of III–V Compound Semiconductor Heterostructure Nanowires

Novel Growth and Properties of GaAs Nanowires on Si Substrates

Growth and characterization of III–V compound semiconductor nanowires

Understanding the true shape of Au-catalyzed GaAs nanowires.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Growth of Straight InAs-on-GaAs Nanowire Heterostructures

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Novel Growth Phenomena Observed in Axial InAs/GaAs Nanowire Heterostructures

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization

Ternary Self-Catalyzed GaAsP Nanowire Grown by Molecular Beam Epitaxy

Growth and characterization of compound semiconductor nanowires on Si

Twinning superlattice formation in GaAs nanowires.

Polarity Driven Formation of InAs/GaAs Hierarchical Nanowire Heterostructures

Modeling the Radial Growth of Self-Catalyzed III-V Nanowires

Structural and Optical Characterization of Vertical GaAs/GaP Core-Shell Nanowires Grown on Si Substrates

In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires