Abstract:The detailed understanding of the electronic properties of semiconducting materials requires the determination of their joint density of states (JDOS) and dielectric constant with high spatial resolution. Low electron energy loss spectroscopy (EELS) provides a continuous spectrum which represents all electronic excitations with energies ranging between zero and about 100 eV. Therefore EELS is potentially more powerful than conventional optical spectroscopy which has an intrinsic upper information limit of about 6 eV due to absorption of light from the optical components of the system or the ambient. However, when analysing EELS data, the extraction of the single scattered data needed for Kramers–Kronig calculations is subject to the deconvolution of the zero loss peak from the raw data. This procedure is particularly critical when attempting to study the near-bandgap region of materials with a bandgap below 1.5 eV. In this paper calculation of the electronic properties of some widely studied carbon materials; namely amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C), C60 fullerite crystal as well as synthetic and natural diamond, are presented. Extrapolation of a fit to the absorption data at the onset of an interband transition was used to get an accurate value for the bandgap energy and to determine whether the bandgap is direct or indirect in character. Particular problems relating to the extraction of the single scattered data for these materials are also discussed. The ta-C and C60 fullerite materials are found to be direct bandgap-like semiconductors, having a bandgap of 2.63 and 1.59 eV, respectively. On the other hand, the electronic structure of a-C was unobtainable because it had such a small bandgap that most of the information is contained in the first 1.2 eV of the spectrum, which is a region removed during the zero loss peak deconvolution. The processing of the data obtained from the ta-C material revealed another benefit of using EELS: the electrons of the beam can transfer momentum and energy to the electrons of the material, thus enabling the probing of indirect interband transitions. Use of this extra feature of EELS coupled with the extremely high spatial resolution obtainable in a scanning electron microscope has indicated that tetrahedral carbon thin films might not be amorphous after all, implying the need for a fresh look at their use as electronic materials.

Use of space-charge-limited current to evaluate the electronic density of states in diamond-like carbon thin films

Modelling of the Electron Field Emission Process in Polycrystalline Diamond-Like Carbon Thin Films

Modeling of the Electron Field Emission Process in Polycrystalline Diamond and Diamond-Like Carbon Thin Films

Electronic density of states in highly tetrahedral amorphous carbon

Study of the Electronic Structure of Carbon Materials Near the Bandgap Using Electron Energy Loss Spectroscopy

Electronic and optical applications of diamond-like carbon

Optical Quantum-Size Effects in Diamond-Like Carbon Superlattice Structures

Electronic-Properties of Semiconducting Diamond-Like Carbon Diamond

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

Optical and Electronic-Properties of Amorphous Diamond

On the models used for TCAD simulations of Diamond Schottky Barrier Diodes

Calculation of the Electronic Structure of Carbon Films Using Electron Energy Loss Spectroscopy

The Optical Properties of Band-Gap-modulated Diamond-Like Carbon Thin Films

The Electronic Band -Gap of Polycrystalline Diamond and Tetrahedral Amorphous Carbon by EELS in a STEM.

Gap States, Doping And Bonding In Tetrahedral Amorphous-Carbon

Electron-Beam Defined Delamination and Ablation of Carbon-Diamond Thin-Films on Silicon

Photoemission Study of Amorphous Carbon Modifications and Comparison with Calculated Densities of States

Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

Electron Field Emission Studies from Amorphous Carbon Thin Films

Density Functional Calculations on Silicon Carbide Nanostructures