Photoelectric Characteristics of Metal/Ingan/Gan Heterojunction Structure

X. Sun,W. B. Liu,D. S. Jiang,Z. S. Liu,S. Zhang,L. L. Wang,H. Wang,J. J. Zhu,L. H. Duan,Y. T. Wang,D. G. Zhao,S. M. Zhang,H. Yang
DOI: https://doi.org/10.1088/0022-3727/41/16/165108
2008-01-01
Abstract:A heterojunction structure photodetector was fabricated by evaporating a semitransparent Ni/Au metal film oil the InGaN/GaN structure. The photocurrent (PC) spectra show that both the Schottky junction (NiAu/InGaN) and the InGaN/GaN isotype heterojunction contribute to the PC signal which suggests that two junctions are connected in series and result in a broader spectral response of the device. Secondary electron, cathodoluminescence and electron-beam-induced current images measured from the same area of the edge surface clearly reveal the profile of the layer structure and distribution of the built-in electric field around the two junctions. A band diagram of the device is drawn based oil the consideration of the polarization effect at the InGaN/GaN interface. The analysis is consistent with the physical mechanism of a tandem structure of two junctions connected in series.
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