Monolithic Integrated Semiconductor Optical Amplifier With Broad Spectrum, High Power, and Small Linewidth Expansion
Xin Li,Lei Liang,Li Jun Wang,Li Qin,Yong Yi Chen,Yu Bing Wang,Yue Song,Yu Xin Lei,Peng Jia,Yu Gang Zeng,Chuan Tao Zheng,Huan Zhao
DOI: https://doi.org/10.1109/access.2021.3096519
IF: 3.9
2021-01-01
IEEE Access
Abstract:Semiconductor optical amplifiers (SOAs) offer direct electrical injection, power consumption, integration, and anti-radiation advantages over optical fiber amplifiers. However, saturation output power and gain bandwidth have been limited in traditional structure SOAs. We demonstrate a monolithic integrated SOA with broad spectrum, high power, high gain, and small spectral linewidth expansion. The device adopts a two-stage amplified large optical cavity structure, and a lower optical field confinement factor is obtained by adjusting the thickness of the waveguide layer. The lower optical field confinement factor is conducive to improving the coupling efficiency and the maximum output power. Our device, fabricated only by standard i-line lithography with micron-scale precision, obtains excellent and stable performance. When the input power is set to 1 mW, the output power is 419 mW with a gain of 26.23 dB. When the input power is set to 25 mW at 25 °C, the output power increases to 600 mW with a gain of 13.8 dB. The corresponding gain bandwidth of 3 dB measures at least 70 nm. The spectral linewidth after the SOA is 1.15 times wider than that of the seed laser.
computer science, information systems,telecommunications,engineering, electrical & electronic