Active Region Mode Control for High-Power, Low-Linewidth Broadened Semiconductor Optical Amplifiers for Light Detection and Ranging
Hui Tang,Meng Zhang,Lei Liang,Tianyi Zhang,Li Qin,Yue Song,Yuxin Lei,Peng Jia,Yubing Wang,Cheng Qiu,Chuantao Zheng,Xin Li,Yongyi Chen,Dan Li,Yongqiang Ning,Lijun Wang
DOI: https://doi.org/10.3390/s24186083
IF: 3.9
2024-09-21
Sensors
Abstract:This paper introduces a semiconductor optical amplifier (SOA) with high power and narrow linewidth broadening achieved through active region mode control. By integrating mode control with broad-spectrum epitaxial material design, the device achieves high gain, high power, and wide band output. At a wavelength of 1550 nm and an ambient temperature of 20 °C, the output power reaches 757 mW when the input power is 25 mW, and the gain is 21.92 dB when the input power is 4 mW. The 3 dB gain bandwidth is 88 nm, and the linewidth expansion of the input laser after amplification through the SOA is only 1.031 times. The device strikes a balance between high gain and high power, offering a new amplifier option for long-range light detection and ranging (LiDAR).
engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation