Transparent Conducting SnO2:Sb Epitaxial Films Prepared on Α-Al2o3 (0001) by MOCVD

Xianjin Feng,Jin Ma,Fan Yang,Feng Ji,Fujian Zong,Caina Luan,Honglei Ma
DOI: https://doi.org/10.1016/j.matlet.2007.10.002
IF: 6.7
2008-01-01
Applied Surface Science
Abstract:Antimony-doped tin oxide (SnO2:Sb) single crystalline films have been prepared on α-Al2O3 (0001) substrates by metal organic chemical vapor deposition (MOCVD). The antimony doping was varied from 2% to 7% (atomic ratio). Post-deposition annealing of the SnO2:Sb films was carried out at 700–1100°C for 30min in atmosphere ambient. The effect of annealing on the structural, electrical and optical properties of the films was investigated in detail. All the SnO2:Sb films had good thermal stability under 900°C, and the 5% Sb-doped SnO2 film exhibited the best opto-electrical properties. Annealed above 900°C, the 7% Sb-doped SnO2 film still kept high thermal stability and showed good electrical and optical properties even at 1100°C.
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