Abstract:Aluminum nitride thin film can be applied as a high-temperature material because of its excellent heat resistance and thermal conductivity, and high mechanical strength. In addition, application and application to surface acoustic wave devices using piezoelectric properties are expected, and it is known as a material that can replace ZnO. To obtain excellent crystal orientation, the residual stress behavior inside the thin film should be fully evaluated and identified. In this study, AlN thin films were deposited by the conventional PM sputtering method and the Two-Facing-Target (TFT) PM sputtering method using BLC glass and quartz glass with different thermal expansion coefficients as substrates. In the process of cooling the fabricated thin film, the effect of the difference in the coefficient of thermal expansion with the substrate on the residual stress of the thin film and the effect of the substrate temperature on the properties of the thin-film structure and the residual stress when the thin film was deposited were investigated. The AlN thin film deposited on the glass substrate by the conventional PM sputtering method showed a crystal structure in which the c -axis was preferentially oriented in the normal direction of the substrate surface, the same as the AlN thin film produced by the two-facing-target PM sputtering method. The AlN thin film deposited on the glass substrate had a crystal structure in which the c -axis was preferentially oriented in the normal direction to the substrate, and the c -axis orientation showed excellent c -axis orientation when the substrate temperature was higher than 523 K. In the case of the quartz glass substrate, the increase of the tensile residual stress was evident as the substrate temperature increased, and the effect of the thermal residual stress was confirmed.

Influence of the texture on Raman and X-ray diffraction characteristics of polycrystalline AlN films

Investigation of chemical etching of AlN film with different textures by x-ray photoelectron spectroscopy

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Influence of Cr-doping on Microstructure and Piezoelectric Response of AlN Films

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

The Influence of the AlN Film Texture on the Wet Chemical Etching

Beyond structural stabilization of highly-textured AlN thin film: the role of chemical effects

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Structural evolution of the elastic properties in nano-structured AlN film

Growth-microstructure-thermal property relations in AlN thin films

Residual Stress of AlN Films RF Sputter Deposited on Si(111) Substrate

Temperature Dependence of Raman Scattering in AlInN

Effects of crystal orientation, substrate type, and substrate temperature on residual stress of AlN thin films deposited by different deposition methods

Dependence on Al Concentration of the Optical Phonons of AlxGa1−xN Films

Enhanced Thermal Conductivity Of Polycrystalline Aluminum Nitride Thin Films By Optimizing The Interface Structure

Raman Spectroscopic Calibrations of Phonon Deformation Potentials in Wurtzitic AlN

Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism