Three-photon Absorption Saturation in ZnO and ZnS Crystals

Bing Gu,Jun He,Wei Ji,Hui-Tian Wang
DOI: https://doi.org/10.1063/1.2903576
IF: 2.877
2008-01-01
Journal of Applied Physics
Abstract:We reported the observation of the saturation of interband three-photon absorption (3PA) in wide-gap semiconductors under intense femtosecond laser excitation. Theoretically, we developed a 3PA saturation model that is in agreement with the Z-scan experimental results. The characteristic saturation intensities were determined to be 44 and 210GW∕cm2 for ZnO and ZnS crystals, respectively. The 3PA saturation model is also consistent with the ultrafast dynamics of 3PA-generated charge carriers in ZnO and ZnS crystals, obtained from the femtosecond transient absorption measurements.
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