Etching Research of ITO Films in PDP

ZHANG Jin-tao,FAN Yu-feng,LEI Gang

DOI: https://doi.org/10.3969/j.issn.1002-8935.2005.06.010

2005-01-01

Abstract:The characteristics of ITO films and its performance in PDP are illustrated.The etching technologies of ITO films suitable for laboratory operation, including gelatinization, border scouring, exposal, development, etching and so on ,are obtained after a series of experiments.

What problem does this paper attempt to address?

Gas Phase Fabrication of Morphology-Controlled ITO Nanoparticles and Their Assembled Conductive Films.

Yilun Jiang,Ji'an Chen,Zhengyang Du,Fei Liu,Yuyuan Qin,Peng Mao,Min Han

DOI: https://doi.org/10.1039/d2nr06381f

IF: 6.7

2023-01-01

Nanoscale

Abstract:ITO nanoparticles were generated in the gas phase with a magnetron plasma gas aggregation cluster source. Their morphologies were modified by modulating the discharging power of magnetron sputtering. The shape of the nanoparticles changed from rough spheroid formed with a higher discharging power to multi-branch formed with a lower discharging power. With a discharging power of 25 W, the ITO nanoparticles were enriched with tripod and tetrapod-shaped nanoparticles. The formation mechanism of multi-branch nanoparticles was attributed to the oriented attachment of the initially nucleated smaller nanocrystallites. Transparent conductive ITO nanoparticle films were fabricated by depositing the preformed nanoparticles with controlled thickness. The electron conduction in the film was dominated by electron tunnelling and/or hopping in the percolative channels comprised of closely spaced ITO nanoparticle assemblies and could be tuned from highly resistive nonmetal-like to highly conductive metal-like by changing the deposition thickness. The film also displayed a SPR band in the near-IR region. The conductivity of the multi-branch ITO nanoparticle film was significantly superior to that of the spheroidal nanoparticle film. For a 46 nm thick multi-branch ITO nanoparticle film, a surprisingly low specific resistance of 3.09 x 10(-4) omega cm, which is comparable to the top-class conductivity of bulk ITO films, was obtained after annealing at a mild temperature of 250 degrees C, with a transmittance larger than 85%.
Study on Wet-etching of ITO Thin Films Based on PLZT

Wei WEN,Chuan-ren YANG,Ji-hua ZHANG,Hong-wei CHEN,Hong-qiu LIANG,Rui-ting ZHANG

DOI: https://doi.org/10.3969/j.issn.1004-2474.2008.06.029

2008-01-01

Abstract:In this paper,a novel wet-etching process of ITO thin films based on PLZT was reported.ITO etched experiments at various temperatures were carried out in mixed solution of V(HCl)∶ V(HNO3)∶ V(H 2O)=50∶3∶50.The suitable etch rate was 30 nm/min at 35 ℃,the ITO pattern had good edge quality and without residues on the surface by SEM and EDS analyzing.PLZT thin films was etched at the same condition,the etch rate was inferior to 2% of ITO's,the wet-etching process showed good selectivity over PLZT thin films.
Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering

Xing Zhang,Jingquan Zhang,Bo Wang,Shenghao Wang,Liang Feng,Yuanqiang Cai,Wu Li-Li,Wei Li,Zhi Li,Bing Li,Guanggen Zeng

2010-01-01

Abstract:In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.
Transparent electric conductive films for optoelectronic devices

Peifu Gu,Xu Liu,Zhidong Zheng,Haifeng Li,Jinfa Tang

1995-01-01

Abstract:The mechanism and preparation as well as experimental results of indium tin-oxide (ITO) transparent electric conductive films with very low resistivity of 1.5��10-4 ��cm and high transmittance of 88-90% have been presented. The influence of some parameters on the resistivity and transmittance has been discussed.
Experimental Design of Preparation,Lithography and Measurement for ITO Thin-film

Le Zhang

2013-01-01

Abstract:Experimental design of display technology of UESTC is analyzed in this paper.This experiment mainly relates to the preparation of ITO thin film,the pattern etching,the square resistance test and the transmittance test of ITO film.Through the experiment,the students can master the preparation of ITO thin film,the formation of thin film pattern,the film performance testing and other basic technology.
Surface Treatments of Indium‐tin Oxide Substrates for Polymer Electroluminescent Devices

Z. Y. Zhong,Y. D. Jiang

DOI: https://doi.org/10.1002/pssa.200622047

2006-01-01

Abstract:In this work, three different sets of processing techniques (wet, dry, and combined treatments) were utilized to modify the surfaces of indium-tin oxide (ITO) substrates for polymer electroluminescent devices (PELDs), and the influence of surface treatments on the surface properties of ITO substrates were investigated by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), contact angle, and four-point probe. The surface energies of ITO substrates were also calculated from the measured contact angles. Experimental results show that the surface properties of the ITO substrates strongly depend on the surface treatments. Oxygen plasma treatment effectively improves the ITO surface properties since plasma decreases the surface roughness and sheet resistance, improves the surface stoichiometry and wetting. Furthermore, the PELDs with the differently treated ITO substrates as hole-injecting electrodes were fabricated and characterized. We observe that the optical and electrical characteristics of devices are greatly influenced by the surface treatments on ITO substrates. Oxygen plasma treatment decreases turn-on voltage, increases brightness and efficiency, and thereby improves the device performance of PELDs. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The Impact of Partial O_2 Pressure in ITO Deposition Process

ZHAO Yang,WU Dong-qi,GAO Xue-song

2012-01-01

Abstract:In this paper,the optical and electrical properties of ITO thin films prepared by DC magnetron sputtering on various conditions,various partial O2 pressure,are investigated in real production.P-ITOmeans ITOin crystalline state.ITOdeposition process in high temperature is ussally called high temperature deposition process,in which ITO crystallizes.By adjusting partialO2 pressure,expected ITOfilms can bemade.
Tuning the Sheet Resistance, Ferromagnetism, and H2O2 Sensitivity of ITO Film by Introducing Tunable Pores

Zeyu Shi,Jianhui Zhang,Cheng Fang,Xi Chen,Zhishan Zhang,Lihuai Shu,Fengzhen Huang,Min Gu

DOI: https://doi.org/10.1021/acs.jpcc.1c02583

2021-01-01

Abstract:An ethanol-assisted etching route using Zn powder as reductant was developed to prepare the tunable pores in ITO films for modifying the sheet resistance, ferromagnetism, and H2O2 sensitivity. Both XRD and XPS revealed that ITO is initially reduced into metal In and Sn by Zn and then dissolved by HCI aqueous solution diluted by ethanol, which makes the etching reactions controllable and homogeneous. By adjusting the amount of Zn and/or ethanol, the pore size and density were continuously tuned in the ranges of 20-280 nm and 49-213/mu m(2), respectively. With enlarging the pore region, the ITO sheet resistance and ferromagnetism gradually enhance. The pore formation decreases the ITO crystalline integrity and carrier density and mainly contributes to the increase of sheet resistance. The enhanced ferromagnetism arises from the increase of oxygen vacancies induced by pores. Contrarily, the ITO ferromagnetism can be greatly depressed by irradiating ITO with UV light to reduce oxygen vacancies. By optimizing the pore structures and sheet resistance, the porous ITOs made here increase the detection sensitivity of H2O2 up to 16.4 times in comparison to the commercial ITO films.
Preparation and Characterization of Pb(ZrxTi1-x)O3 Thin Film on Indium Tin Oxide

LIU Shuang,wu Ya-lei,XU Xiao-hui,WEN Li,HUANG Wen-hao,CHU Jia-ru

DOI: https://doi.org/10.3969/j.issn.1672-6030.2007.04.023

2007-01-01

Nanotechnology and Precision Engineering

Abstract:Pb(ZrxTi1x)O3(PZT) lead zirconate titanate thin films were prepared and characterized on indium tin oxide(ITO) by sol-gel process.Crystal orientation of the film was improved by rapid thermal annealing process,and analyzed by X-ray diffraction.Also electrical properties of thin films were tested using the principle of Sawyer-Tower circuit based on Al/PZT/ITO and ITO/PZT/ITO capacitance structure respectively.The testing result shows that PZT thin films with the perovskite structure(110) oriention can be prepared on ITO,the relative dielectric constant of the film,as high as 1 000,was measured;strengths of remnant polarization and coercive fields of the film reached 15.2 uc/cm2 and 70.8 kV/cm respectively.Using the TF Analyzer 2000,the fatigue properties of the PZT thin film on ITO were tested,and remnant polarization strength decreased only by 15% after 108 cycles.It is concluded that transparent conductive oxide thin film ITO prepared by magnetron sputtering can be served as the electrodes of PZT thin film.
Damage study of ITO under high electric field

J. He,M. Lu,X. Zhou,J.R. Cao,K.L. Wang,L.S. Liao,Z.B. Deng,X.M. Ding,X.Y. Hou,S.T. Lee

DOI: https://doi.org/10.1016/S0040-6090(99)01066-4

IF: 2.1

2000-01-01

Thin Solid Films

Abstract:Photoetching was used to obtain a narrow gap (about 10 mu m) on a slip of indium tin oxide (ITO) which was coated on a glass plate. A high electrical field (about 10(6) V/cm) was applied between the two sides of the gap, so as to study the characteristics of ITO. Under this field, there is an intermittent current between two sides of the gap. We found that ITO decomposed, became opaque and its surface became Very rough. The atomic concentrations of In and Sn in the dark region were higher than those in the original ITO slip. The resistance of the ITO slip increased accordingly. There were some gases, such as oxygen, carbon dioxide (or nitrogen), carbon monoxide, which evolved from the surface when ITO decomposed. After quick annealing under an oxygen atmosphere, the sample became as transparent as the original ITO. These observations show that ITO decomposes under a high electric field. (C) 2000 Elsevier Science S.A. All rights reserved.
Study on Adhesion and Electro-Optical Properties of ITO Films on Flexible PET Substrate

Tang Wu,Weng Xiaolong,Wu Yutao,Deng Longjiang

DOI: https://doi.org/10.1016/s1001-0521(08)60054-6

IF: 6.318

2006-01-01

Rare Metals

Abstract:High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure. Adhesion and electro-optical properties of ITO films were investigated as a function of Ar partial pressure. The sputtering conditions provide very uniform ITO films with high transparency ( > 85% in 400-760 nm spectra) and low electrical resistivity (1. 408 x 10(-3)-1.956 x 10(-3) Omega.cm). Scratch test experiments indicate that there is a good adhesion property between ITO films and PET substrate, the critical characteristic load increases from 16.5 to 23.2 N with increasing Ar sputtering pressure from 0.2 to 1.4 Pa.
Sulfuric Acid Treatment Of Indium Tin Oxide For Application Of Organic Light-Emitting Diodes

Li Wei-zhi,Ji Xing-qiao,Zhong Zhi-you,Wang Tao,Jiang Ya-dong

DOI: https://doi.org/10.1117/12.667366

2006-01-01

Abstract:In this paper, indium tin oxide (ITO) substrates were treated by ethanol, sulfuric acid (98%) and oxygen plasma respectively, based on which organic light-emitting diodes (OLEDs) with the same double-layer structure: ITO/N,N'-bis-(1-naphyl)-N,N'-diphenyl-1,1'- biphenyl-4,4'-diamine(NPB)/tris-(8-hydroxyquinoline) aluminum(Alq(3))/ Mg:Ag/Al were fabricated. The morphology and compositions of differently treated ITO films were analyzed by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). AFM results showed that all these treatments didn't change much the average roughness of ITO films, while ethanol has little influence on the large "peak-valley" (P-V) distance of ITO film; ITO film treated by sulfuric acid has suitable surface morphology with low P-V distance, low average roughness and small particle radius. XPS analysis proved that ethanol has the weakest ability to remove carbon contamination on the surface of ITO film which resulted in unevenly distributed current and high barriers for hole injection; sulfuric-acid-treated ITO film has the least contamination of carbon and higher concentration of oxygen vacancies, both of which are helpful for the improvement of devices. In the condition of room temperature and atmosphere and without encapsulation, measurements of the current-voltage, brightness-voltage and lifetime characteristics of these devices were conducted and showed good agreement with what expected from the results of AFM and XPS analysis: the ethanol-treated ITO provides very unstable performance with low efficiency for the device based on it, while the device based on sulfuric-acid-treated ITO anode had even better performance at higher driven voltage (> 7V) comparing with the device based on oxygen-plasma-treated ITO substrate and had the highest current-luminance efficiency (3.2 cd/A) and the longest lifetime (2 hours).
Electrical and optical properties of ITO and ITO:Zr transparent conducting films

Bo Zhang,Xianping Dong,Xiaofeng Xu,Xinjian Wang,Jiansheng Wu

DOI: https://doi.org/10.1016/j.mssp.2008.03.003

IF: 4.1

2007-01-01

Materials Science in Semiconductor Processing

Abstract:ITO and ITO:Zr films were deposited on glass substrates by magnetron sputtering. Electrical and optical properties of the films at different experiment parameters such as substrate temperature, oxygen flow rate and annealing temperature were contrastively studied. The increase in substrate temperature remarkably improves the electrical and optical properties of the films. ITO:Zr films show better quality at low substrate temperature. The excessive oxygen can worsen the optical properties of the films. Better optical–electrical properties of the films can be achieved after the proper annealing treatment. Obvious Burstin–Moss effect can be revealed by transmittance spectra with different parameters, and the direct transition models show the change of optical band gap. ITO:Zr films prepared by co-sputtering show better optical–electrical properties than ITO films.
Modification of ITO Surface for High Performance of Electrochromic Polymer Film

xingming wu,shuwei yang,chunye xu,jianming zheng

DOI: https://doi.org/10.6023/A13020168

2013-01-01

Acta Chimica Sinica

Abstract:The relatively low reactivity of indium tin oxide(ITO) thin film coated on glass with its good conductivity and transparency make it the widely used electrode in displays and electrochromic devices.However,the inactivity of the surface may cause serious problems for physically deposited electrochromic polymer films from detachment to short durability,es-pecially,in the presence of electrolyte liquids.We here report that significant improvement is made for electrochromic films of poly[3,4-(2,2-dimethylpropylenedioxy)thiophene] by electrodepositing its monomer on ITO surface modified with organic acids.We first designed and synthesized 2-thienyl phosphonic acid which was used to modify ITO glass.ITO glass was im-mersed in modifier solution vertically on a glass bracket and the solution was allowed to evaporate slowly at ambient condi-and self-assemble to high-order monolayer.X-ray photoelectron spectroscopy results indicate that chemical binding is formed tion.The glass was removed from the glass bracket when it was fully exposed to the air,and then baked at 120 ℃ for 24 h in glove box.After modification,the modifier molecules are able to react with hydroxyl groups on ITO surface by losing H2O between the surface and the modifier.By attaching the modifier molecules to ITO surface with ester bonds,the surface changes from hydrophilic to hydrophobic,but the transmittance and conductivity remain the same as bare ITO.Atomic force microscope results demonstrate that surface roughness of modified ITO showed a little reduction compared with bare one.To test the mechanical strength of electrochromic polymer thin film on different substrate,we treated the films by sonication.The results reveal a much better stability for the film formed on the modified ITO than that on bare one.Meanwhile,color changing property of electrochromic polymer film electropolymerized on modified substrate remains the same as that on bare substrate.This study provides a conventional way to achieve high-performance polymer-based electrochromic films.
Advances of PZT Ferroelectric Thin Films in Etching Techniques

史鹏,姚熹,吴小清,张良莹

DOI: https://doi.org/10.3969/j.issn.1004-2474.2003.05.012

2003-01-01

Abstract:PZT thin films have many important applications in microelectronic fields. They can be used to make some advices, such as MEMS, DRAM, infrared devices et al. The etching techniques and micropattern of PZT thin films are very important to the preparation of devices. This article chiefly introduces some etching techniques of PZT thin films and the related results, gives some comparisons about these methods.
Influence of Ito Surface Treatments on the Performance of Polymer Light-Emitting Diodes

ZZ You,JY Dong,W Tao,LW Zhi,JX Qiao

DOI: https://doi.org/10.1117/12.667371

2006-01-01

Abstract:Solvent cleaning and oxygen plasma treatment were carried out on the indium-tin oxide (ITO) anodes for polymer light-emitting diodes (PLEDs). The influences of different treatment methods on the surface properties of ITO anodes were investigated using different standard surface characterization techniques, i.e., X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle. Based on the measurements of contact angles, the surface energies of the ITO anodes were also calculated using the harmonic-mean method. We observe that the surface treatments decrease the carbon content, increase the oxygen content, reduce the surface roughness and enhance the wettability, and thereby improve the surface properties of ITO anodes. With respect to the solvent cleaning, the oxygen plasma treatment is more efficient since it brings about a better improvement in the ITO surface properties due to the contaminants can be removed effectively from the ITO surface. Furthermore, we studied the effect of surface treatments of the ITO anodes on the characteristics of PLEDs, in terms of the electrical and optical performance of the devices. Experimental results reveal that the surface treatments improve the electroluminescent characteristics of the PLEDs. The oxygen plasma treated device gives smaller turn-on voltage and driving voltage, higher brightness and efficiency as well as better quality of light emission compared to the solvent cleaned device. The result can be attributed to oxygen plasma treatment improves the surface properties of ITO anode and the interface characteristics of ITO/polymer.
Research on the Mesa Etch of OEIC

Chao FAN,Rui LI,Tangsheng CHEN,Lijie YANG,Ou FENG,Zhong FENG,Chen CHEN,Shilong JIAO,Yutang YE

DOI: https://doi.org/10.3969/j.issn.1000-3819.2009.02.020

2009-01-01

Abstract:The etch-stop process is developed completely and applied to the fabrication of OEIC (Optoelectronic Integrated Circuits) through deeply studying the mechanism of sacrificial layer etching. The problems such as side etching, mesa deformation and surface cleaning etc in the experiment are found. The key point of the problems is analyzed through the studying of experiments and the standard process is improved including new etchant and new technological process. All the problems are solved by improved process and it can be applied to the following process completely.
Analysis of Orthogonal Experiments on ITO Films Prepared by DC Magnetron Sputtering

WANG Jun,LIN Hui,YANG Gang,JIANG Ya-dong,ZHANG You-run

DOI: https://doi.org/10.3969/j.issn.1001-5868.2007.01.019

2007-01-01

Abstract:Indium tin oxide(ITO) films were deposited by DC magnetron sputtering system and experimentations were scheduled by orthogonal test table L32(48).Sheet resistance and transmittance of films were tested.Effects of eight parameters on electrical and optical properties of the films were analyzed in detail.Three factors including deposition pressure,flow ratio of argon to oxygen and annealing temperature had greatly influence on conductance of ITO films.Best parameters about sputtering ITO were:deposition pressure 2×133.3224 mPa;Ar∶O2 16∶0.5;annealing temperature 427 ℃;gap 15;annealing time 1 h;power 300 W;annealing in vacuum;deposition temperature 227 ℃.Sheet resistance,transmittance in visible region and resistivity of the films prepared with the above parameters were 17 Ω/□,85.13%,1.87×10-4Ω·cm,respectively.
Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma

Changzheng Sun,Jian Wang,Qiwei Zhou,Bing Xiong,Yi Luo

DOI: https://doi.org/10.1109/iciprm.2007.381165

2007-01-01

Abstract:Dry etching of InP-based semiconductors is carried out by inductively coupled plasma (ICP) for optoelectronic device fabrication. The etching conditions for different chemical mixtures are optimized to ensure high anisotropy and smooth surface morphology.
Electrode Modifications for Polymer Light-Emitting Electrochemical Cells

Z. Y. Zhong,Y. D. Jiang,W. Z. Li,X. Yang

2006-01-01

Rare Metal Materials and Engineering

Abstract:The influence of different modification methods on the surface properties of indium-tin-oxide (ITO) electrodes were investigated by measurements of chemical composition, surface roughness, sheet resistance, contact angle and surface free energy. Experimental results demonstrate that oxygen plasma treatment more effectively optimizes the surface properties of ITO electrodes compared with the other treatments. Furthermore, the polymer light-emitting electrochemical cells (PLECs) with the differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that oxygen plasma treatment on the ITO electrode enhances injection current, luminance and efficiency, thereby improves the device characteristics of the PLECs.

Etching Research of ITO Films in PDP

Gas Phase Fabrication of Morphology-Controlled ITO Nanoparticles and Their Assembled Conductive Films.

Study on Wet-etching of ITO Thin Films Based on PLZT

Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering

Transparent electric conductive films for optoelectronic devices

Experimental Design of Preparation,Lithography and Measurement for ITO Thin-film

Surface Treatments of Indium‐tin Oxide Substrates for Polymer Electroluminescent Devices

The Impact of Partial O_2 Pressure in ITO Deposition Process

Tuning the Sheet Resistance, Ferromagnetism, and H2O2 Sensitivity of ITO Film by Introducing Tunable Pores

Preparation and Characterization of Pb(ZrxTi1-x)O3 Thin Film on Indium Tin Oxide

Damage study of ITO under high electric field

Study on Adhesion and Electro-Optical Properties of ITO Films on Flexible PET Substrate

Sulfuric Acid Treatment Of Indium Tin Oxide For Application Of Organic Light-Emitting Diodes

Electrical and optical properties of ITO and ITO:Zr transparent conducting films

Modification of ITO Surface for High Performance of Electrochromic Polymer Film

Advances of PZT Ferroelectric Thin Films in Etching Techniques

Influence of Ito Surface Treatments on the Performance of Polymer Light-Emitting Diodes

Research on the Mesa Etch of OEIC

Analysis of Orthogonal Experiments on ITO Films Prepared by DC Magnetron Sputtering

Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma

Electrode Modifications for Polymer Light-Emitting Electrochemical Cells