Room temperature ultraviolet lasing action in high-quality ZnO thin films

X.Q. Zhang,Ikuo Suemune,H. Kumano,Z.G. Yao,S.H. Huang
DOI: https://doi.org/10.1016/j.jlumin.2006.01.300
IF: 3.6
2007-01-01
Journal of Luminescence
Abstract:High-quality ZnO thin films were grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. In the edge emission geometry, lasing action has been demonstrated in ZnO thin films. The physical origin responsible for lasing action is discussed. The well-defined longitudinal modes could be observed, the mode spacing of 0.9 nm corresponds to a cavity of around 17.5 mu m, and result from accidentally or naturally formed cavities. The lasing threshold was measured as a function of temperature, and the threshold was found to show weak temperature dependence. (c) 2006 Elsevier B.V. All rights reserved.
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