Abstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and size relative to hybrid solutions. Although significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III-V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III-V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-Gaussian emission spectrum of 114 nm centered at similar to 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. This work complements our previous demonstration of an InAs/GaAs QD laser directly grown on a Si platform and paves the way for future monolithic integration of III-V light sources required for Si photonics.

Inas/Gaas Submonolayer Quantum Dot Superluminescent Diode Emitting Around 970 Nm

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Deep-Ultraviolet Emission from an Ingaas Semiconductor Laser

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.

GaAs/AlGaAs quantum cascade lasers

Monolithically Grown Superluminescent Diodes On Germanium And Silicon Substrates

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers

Inas/Gaas Quantum-Dot Light Emitters Monolithically Grown On Si Substrates

A high-performance quantum dot superluminescent diode with a two-section structure

White light-emitting quantum dot diodes and tuning of luminescence processes

Mid-infrared electroluminescence at room temperature from InAsSb multi- quantum-well light-emitting diodes

High power GaSb-based superluminescent diode with cascade cavity suppression waveguide geometry and ultra-low antireflection coating

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Graded Tensile-Strained Bulk InGaAs/InP Superluminescent Diode with Very Wide Emission Spectrum

Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire.

InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate