A Perspective on Today’s Scaling Challenges and Possible Future Directions

Robert H. Dennard,Jin Cai,Arvind Kumar
DOI: https://doi.org/10.1016/j.sse.2007.02.004
2012-01-01
Abstract:Progress in scaling of MOS transistors and integrated circuits over the years is reviewed and today’s status and challenges are described. Generalized scaling is updated for the present leakage-constrained environment to project results of continued scaling at a constant power-supply voltage. Alternatives to achieve energy-efficient operation at lower voltages are discussed. Particular attention is given to threshold variability issues and to the design challenges in reducing and controlling variability using back-gate devices. The importance of the depth of the inversion layer below the silicon surface as a limit to the effectiveness of gate-insulator scaling is illustrated by a design study. Low-temperature operation is considered as a possible future direction for continuing scaling.
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