Abstract:In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime which has no analogue in metals. Here spin injection from a ferromagnet (FM) into a nonmagnetic semiconductor (NS) is extensively studied by applying this spin drift-diffusion equation to several typical injection structures such as FM/NS, FM/NS/FM, and FM/NS/NS structures. We find that in the high-field regime spin injection from a ferromagnet into a semiconductor is enhanced by several orders of magnitude. For injection structures with interfacial barriers, the electric field further enhances spin injection considerably. In FM/NS/FM structures high electric fields destroy the symmetry between the two magnets at low fields, where both magnets are equally important for spin injection, and spin injection becomes locally determined by the magnet from which carriers flow into the semiconductor. The field-induced spin injection enhancement should also be insensitive to the presence of a highly doped nonmagnetic semiconductor (NS$^+$) at the FM interface, thus FM/NS$^+$/NS structures should also manifest efficient spin injection at high fields. Furthermore, high fields substantially reduce the magnetoresistance observable in a recent experiment on spin injection from magnetic semiconductors.

Schottky-Barrier-Induced Spin Relaxation in Spin Injection

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

The electric field effect on spin injection in tunneling regime

Electron Interaction Effects on Spin Injection into Semiconductors

Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier

Electron space charge effect on spin injection into semiconductors

Spin diffusion and injection in semiconductor structures: Electric field effects

Irreversible spin-transfer and magnetization reversal under spin-injection

Spin accumulation and decay in magnetic Schottky barriers

Nonvanishing Spin Hall Currents in the Presence of Magnetic Impurities

Spin Injection into Semiconductors Driven by A Spin Battery

Injection of spin-polarized carriers in ferromagnet/superconductor tunnel junctions

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier

Co-Ordination Between the Rashba Spin-Orbital Interaction and Space Charge Effect and Enhanced Spin Injection into Semiconductors in the Diffusion Region

Calculations of the Spin-Polarization of the Electronic Current Injected from A Ferromagnetic Metal into A Semiconductor

Spin-polarized Tunneling Through a Diluted Magnetic Semiconductor Quantum Dot

Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors

A Novel Spin-Polarized Transport Effect Based on Double-Schottky Barriers

Control Of Spin Relaxation In Semiconductor Double Quantum Dots

Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures

Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor