Spin accumulation and decay in magnetic Schottky barriers

Gerrit E. W. Bauer,Yaroslav Tserkovnyak,Arne Brataas,Jun Ren,Ke Xia,Maciej Zwierzycki,Paul J. Kelly

DOI: https://doi.org/10.1103/PhysRevB.72.155304

2005-01-29

Abstract:The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductance mismatch is found to enhance the current induced spin-imbalance in the semiconductor. The GaAs|MnAs interface resistance is obtained from an analysis of the magnetic field dependent Kerr rotation experiments by Stephens et al. and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows towards the theoretical values, reflecting increasingly efficient Schottky barrier screening.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to understand and explain the characteristics of spin accumulation and spin decay in magnetic Schottky barriers. Specifically, the author focuses on how to experimentally observe the significant spin accumulation phenomenon under forward - bias conditions and reveals the underlying physical mechanisms through theoretical analysis.

### Main Problems

1. **Characteristics of Spin Accumulation and Spin Decay**:
- The paper explores the characteristics of spin accumulation and spin decay in the semiconductor in a forward - biased magnetic Schottky barrier.
- By analyzing the experimental results of Stephens et al. [13], the author found that spin accumulation can still increase significantly in the semiconductor even in the presence of conductance mismatch.

2. **Effect of Conductance Mismatch**:
- Conductance mismatch refers to the conductance mismatch problem between ferromagnetic metal (F) and semiconductor (SC).
- The paper points out that conductance mismatch will not suppress spin injection, but will enhance spin - imbalance in some cases.

3. **Combination of Experiment and Theory**:
- By analyzing the magnetic - field - dependent Kerr - rotation experimental data, the author extracted the GaAs | MnAs interface resistance and compared it with the results obtained from first - principles calculations.
- The research shows that as the bias current increases, the interface transparency gradually approaches the theoretical value, reflecting the enhancement of the Schottky barrier screening effect.

### Formula Analysis

To understand these problems more clearly, the paper uses some key formulas to describe the spin transport process:

1. **Spectral Spin Current**:
\[
eI_s(\varepsilon) = G_I^s(\varepsilon) f_s(\varepsilon)
\]
where \( I_s(\varepsilon) \) is the spectral spin current with energy \( \varepsilon \), \( G_I^s(\varepsilon) \) is the interface conductance, and \( f_s(\varepsilon) \) is the occupation function.

2. **Total Spin Current**:
\[
I_s=\int I_s(\varepsilon) d\varepsilon
\]

3. **Spin Accumulation Equation**:
\[
eI_z = \frac{eI^{(0)}_z}{1+\frac{G_I}{2G_{SC}}}
\]
where \( I_z = I_\uparrow - I_\downarrow \) and \( G_{SC} \) is the conductance of the semiconductor.

4. **Bloch Equation**:
\[
-T_I\frac{d\langle\mu\rangle}{dt}=\Gamma\langle\mu\rangle+\frac{2e\langle I_z\rangle}{G_I}
\]
where \( T_I=\frac{2e^2D}{G_I} \) is the interface relaxation time and \( \Gamma \) is the relaxation matrix.

### Conclusion

Through the derivation of these formulas and the analysis of experimental data, the author concludes that in a forward - biased magnetic Schottky barrier, conductance mismatch will not suppress spin injection but can enhance spin accumulation. In addition, the experimental results show that the interface resistance has an important influence on spin accumulation. Especially under low - bias conditions, the interface - mediated spin decay is weaker than expected. As the bias current increases, the interface conductance gradually approaches the theoretical value predicted by first - principles calculations, indicating that the interface is approaching the Ohmic limit.

In general, through theoretical analysis and experimental verification, this paper reveals the magnetic Schottky barrier.