Spin accumulation and decay in magnetic Schottky barriers

Gerrit E. W. Bauer,Yaroslav Tserkovnyak,Arne Brataas,Jun Ren,Ke Xia,Maciej Zwierzycki,Paul J. Kelly
DOI: https://doi.org/10.1103/PhysRevB.72.155304
2005-01-29
Abstract:The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductance mismatch is found to enhance the current induced spin-imbalance in the semiconductor. The GaAs|MnAs interface resistance is obtained from an analysis of the magnetic field dependent Kerr rotation experiments by Stephens et al. and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows towards the theoretical values, reflecting increasingly efficient Schottky barrier screening.
Mesoscale and Nanoscale Physics,Materials Science
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