AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy
Dongqi Zhang,Tao Tao,Haiding Sun,Siqi Li,Hongfeng Jia,Huabin Yu,Pengfei Shao,Zhenhua Li,Yaozheng Wu,Zili Xie,Ke Wang,Shibing Long,Bin Liu,Rong Zhang,Youdou Zheng
DOI: https://doi.org/10.3390/nano12142508
IF: 5.3
2022-07-21
Nanomaterials
Abstract:AlGaN nanorods have attracted increasing amounts of attention for use in ultraviolet (UV) optoelectronic devices. Here, self-assembled AlGaN nanorods with embedding quantum disks (Qdisks) were grown on Si(111) using plasma-assisted molecular beam epitaxy (PA-MBE). The morphology and quantum construction of the nanorods were investigated and well-oriented and nearly defect-free nanorods were shown to have a high density of about 2 × 1010 cm−2. By controlling the substrate temperature and Al/Ga ratio, the emission wavelengths of the nanorods could be adjusted from 276 nm to 330 nm. By optimizing the structures and growth parameters of the Qdisks, a high internal quantum efficiency (IQE) of the AlGaN Qdisk nanorods of up to 77% was obtained at 305 nm, which also exhibited a shift in the small emission wavelength peak with respect to the increasing temperatures during the PL measurements.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry