Abstract:One-dimensional (1D) semiconducting nanomaterials have attracted considerable interest for their potential applications in optoelectronic and microelectronic devices. Among thoses 1D semiconducting nanomaterials, ZnO is a wide band gap semiconductor and one of the most functional materials. On account of its many interesting properties, such as superior emission, chemical and thermal stability, transparency, biocompatibility, and wide electrical conductivity range, ZnO has a variety of applications in an emerging area of nanotechnology. Moreover, as a very important one of ZnO nanostructure groups, ZnO nanorods(NRs) have wide applications in nanoelectronics including nanobased light-emitting diodes (LEDs), field effect transistors (FETs), ultraviolet (UV) lasers, and nanogenerators. Until now, there are numerous experimental methods to prepare ZnO NRs involving molecular beam epitaxy (MBE), sputtering, electrochemical deposition, vapor phase transport (VPT), chemical vapor deposition (CVD), and thermal evaporation. However, most of these attempts need some kind of metals to act as a catalyzer. Aurum, zinc, argentine, and aluminium are often used in these methods, which make the prepared ZnO NRs impure. In the cases the metallic impurities have awful influence on the electrical and optical properties of ZnO NRs, an advanced and catalyst-free ZnO growth method needs to be exploited.In this paper, ZnO NRs were successfully synthesized on indium phosphide (InP) (100) substrates by using pulsed laser deposition (PLD) method with catalyst-free. The morphology, crystal structural and optical properties were characterized with scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) analytic approaches, respectively. SEM pattern showed the ZnO nanorods were well-oriented. From the XRD scan results, a strong peak was observed at 34.10° attributed to the ZnO (002) face, indicating that the growth direction is well-oriented along c axis. A typical PL spectrum was measured at room temperature, showing a strong free-excition emission at about 379 nm, with full width at half maximum (FWHM) value of 19 nm, no deep level emission was detected, indicating that the ZnO nanorods produced in this experiment are of high optical quality.

Growth Mechanisms for ZnO Nanorods Formed by Pulsed Laser Deposition

Growth of aligned ZnO nanorod arrays by catalyst-free pulsed laser deposition methods

Growth Mechanism And Properties Of Zno Nanorods Synthesized By Plasma-Enhanced Chemical Vapor Deposition

Structural and Optical Properties of ZnO Nanorods Synthsized by PLD Method

Synthesis, Characterization and Optical Properties of Flower-Like ZnO Nanorods by Non-Catalytic Thermal Evaporation

MgxZn1-xO Nanorod Arrays Synthesized by Pulsed-Laser Deposition

Synthesis and Size Control of Zno Nanorods by Conventional Pulsed-Laser Deposition Without Catalyst

Fabrication of ZnO Nanorods by Pulsed Nd:YAG Laser Ablation Deposition

Catalyst-free Synthesis of ZnO Nanorod Arrays on InP (001) Substrate by Pulsed Laser Deposition

Growth of Well-Aligned ZnO Nanorod Arrays on Si Substrates by Thermal Evaporation of Cu-Zn Alloy Powders.

Mechanism Of Zno Nanotube Growth By Hydrothermal Methods On Zno Film-Coated Si Substrates

Growth of ZnO nanostructures on metallic and semiconducting substrates by pulsed laser deposition technique

Synthesis, microstructure and photoluminescence of well-aligned ZnO nanorods on Si substrate

Solution-grown ZnO Nanorods on Femtosecond Laser-microstructured Si Substrates

Photoluminescence and Lasing Properties of Catalyst-Free ZnO Nanorod Arrays Fabricated by Pulsed Laser Deposition

Growth and Properties of ZnO Nanorod with UV-Light

Eutectic Condensation and Nucleation in Vapor-Liquid-Solid Grown Zno Nanorod Arrays on Si Substrate

Self-Catalyst Synthesis of Aligned Zno Nanorods by Pulsed Laser Deposition

ZnO nanorods/plates on Si substrate grown by low-temperature hydrothermal reaction

Size-controllable Growth of ZnO Nanorods on Si Substrate

Controllable growth of ZnO nanorods by seed layers annealing using hydrothermal method