Supplemental Materials for “ Photo-Spin-Voltaic Effect ”
David Ellsworth,Lei Lu,Jin Lan,Houchen Chang,Peng Li,Zhe Wang,Jun Hu,Bryan Johnson,Yuqi,Bian,Jiang Xiao,Ruqian Wu,Mingzhong Wu
2016-01-01
Abstract:The substrates for yttrium iron garnet (Y3Fe5O12, YIG) and Ga-doped YIG film samples were single-crystal (111)-oriented gadolinium gallium garnet (Gd3Ga5O12, GGG). The 4.9-m-thick YIG films, the 10.4-mthick YIG films, and the 78-m-thick Ga-doped YIG films were grown by liquid phase epitaxy techniques.1 The doped YIG films contain 2.5% (atomic) of gallium. The 21-nm-thick YIG films were grown by RF sputtering.2,3 The 1.2-m-thick barium hexagonal ferrite (BaFe12O19, BaM) films were grown on singlecrystal c-axis in-plane sapphire substrates by pulsed laser deposition techniques.4 The Pt and Cu layers were grown by DC sputtering at room temperature. The YIG, doped YIG, and BaM films were characterized by field-in-plane ferromagnetic resonance (FMR) measurements. Fitting of the FMR frequency vs. field responses with the Kittel equation yielded an effective saturation magnetization (4πMs) of 1920 G for the 4.9-μm-thick YIG films, 950 G for the 78-μm-thick Ga-doped YIG films, 1757 G for the 21nm-thick YIG films, and 3870 G for the 1.2-m-thick BaM films. Static magnetic measurements indicated that the BaM films had an effective uniaxial anisotropy field of 16.5 kOe and a remnant magnetization of 3440 G, both along the in-plane c axis.