Abstract:InAs quantum dots (QD) made by self-assembled growth naturally have a random spatial and large spectral distribution. However the spatial and spectral profile of an optical cavity mode are highly predictable. To achieve the maximum interaction of single QD spontaneous emission (SE) with a cavity mode, QDs should ideally be spatially located in the cavity mode, but well isolated from nearby nonradiative surface recombination. To solve this issue, we have developed a patterned regrowth technique to place QDs near the antinode of a cavity mode. We show that the regrowth process does not affect the QDs optical properties while maintaining reasonable cavity quality factors. The PL signature of our QDs is discussed. We identify the single excitons, charged excitons and bi-excitions. Their relative intensities are decided by the excessive energy of free carriers and tunable by the sample temperature. In our research, we see strong evidence of disk sizing effect, which provide additional method to control the QD density besides material deposition and growth temperature. With this additional tunability, the QD density can be adjusted to produce low numbers of QDs (1 similar to 3 dots) per disk, so the optimal coupling of a single QD with a single cavity mode is quite plausible.

Energy Transfer Within Ultralow Density Twin InAs Quantum Dots Grown by Droplet Epitaxy.

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Fabrication of Ultralow-Density Quantum Dots by Droplet Etching Epitaxy

Highly Uniform and Symmetric Epitaxial InAs Quantum Dots Embedded Inside Indium Droplet Etched Nanoholes.

Single Inas Quantum Dot Coupled to Different "environments" in One Wafer for Quantum Photonics

Ultrahigh-density Self-Assembled Quantum Dots of InGaAs and Suppression of Optical State-Filling Effect

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Vertically coupled multilayers of self-assembled InAs quantum dots

Extremely Low Density Inas Quantum Dots with No Wetting Layer

Photoluminescence Study of Low Density InAs Quantum Clusters Grown by Molecular Beam Epitaxy.

Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots.

Inas Self-Assembled Quantum Dots Grown On An Inp (311)B Substrate By Molecular Beam Epitaxy

Efficient Exciton Transfer from in 0.35 Ga 0.65 As Template into InAs Quantum Dots Grown on GaAs (311) B Substrates

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer.

InAs Quantum Dots for Quantum Information Processing

High-Density and Narrow Size-Distribution Inas Quantum Dots Formed by A Modified Two-Step Growth

Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity

The Structural and Photoluminescence Properties of Self-Organized Quantum Dots in Inas/In0.53ga0.47as Multilayer on Inp Substrate

Low-Density Inas Quantum Dots Growth by Molecular Beam Epitaxy

Photoluminescence of a single InAs quantum dot molecule under applied electric field