Abstract:Although the body diode of SiC MOSFET has excellent surge capability, the reliability issues about commercial SiC MOSFET under repetitive surge current stress of body diode haven't been studied thoroughly. In this work, repetitive surge current stress is applied to the body diode of commercial SiC trench MOSFET, and the surge tests are conducted under different gate biases and ambient temperatures. It is found that no bipolar degradation occurs in the body diode but degradation phenomena of gate oxide and package are observed in devices under tests (DUTs). At room temperature, the threshold voltage (VT8) related to gate oxide degradation degrades more seriously at a negative gate bias of -5V than at 0V. At 0V gate bias, gate oxide and package degenerate more severely at /25°C than at 25°C. The evolution of on-state resistance (R DSON ) during the tests is influenced by the competitive mechanism between gate oxide degradation and package degradation. As a result, gate oxide degradation causes R DSON to reduce while package degradation makes R DSON rise. Meanwhile, the competitive mechanism is deeply influenced by the gate bias voltage and ambient temperature. The failure analysis shows that all DUTs fail with gate and source terminal shorted, which is mainly attributed to high junction temperature.

Analysis of the turn-off failure mechanism of silicon power diode

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Off-state Avalanche Breakdown Induced Degradation in 20 V NLDMOS Devices

Comprehensive Failure Mechanisms in High Voltage P-i-N Diode During Turn-off Transient

Ruggedness Analysis of 600V 4H-Sic JBS Diodes under Repetitive Avalanche Conditions

Rbsoa Study Of High Voltage Sic Bipolar Devices

Analysis of Leakage Current in SiC Power MOSFET Static Avalanche Breakdown Based on Temperature-Dependent Simulation

Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs

The Surge Current Failure and Thermal Analysis of 4H-Sic Schottky Barrier Diode

Investigation and Failure Mode of Asymmetric and Double Trench SiC Mosfet S under Avalanche Conditions

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

Investigation of Failure Mechanisms of 1200V Rated Trench SiC MOSFETs under Repetitive Avalanche Stress

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

Failure Mechanism Analysis of Single-Event Effect in 4H-SiC Inverters

Analysis Of The Mosfet Failure In A Junction-Isolated Power Integrated Circuit

Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Failure Analysis And Improvement Of The Body Diode In Superjunction Power Mosfet

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions