Abstract:The atomic structure and configuration of Si0.65Ge0.35B x (x = 0, 0.01, 0.05, 0.10) powders prepared by long-time mechanical alloying are analyzed by X-ray total scattering measurement and transmission electron microscopy. The results show that the powders contain a large amount of the amorphous phase and a small amount of the crystalline phase. The structural parameters, including the fractions of the amorphous and crystalline phases, are obtained by pair distribution function (PDF) analysis applied to crystalline materials. There is a crystal growth mechanism attributable to small amounts of boron added, as a significant increase in crystalline phase fraction is only observed at x = 0.01. The angle of Bragg peaks does not shift monotonically with increasing amount of boron added. Furthermore, the lattice parameter shortening predicted from the peak shift exceeds that derived from boron substitution. This suggests the existence of another mechanism for lattice parameter change with boron doping. Crystal PDF analysis with a four-phase model consisting of three crystalline phases and one amorphous phase shows a decrease in the lattice constant of a B-doped Si–Ge crystal with increasing x, suggesting B substitution. Although not clear from this study, it is possible that boron doping or long-time mechanical alloying may have led to the formation of pure Si or a high-Si-concentration Si–Ge crystalline phase.

Crystallization Behavior of Bi4Si3O12-Bi4Ge3O12 Pseudo-binary System and Its Crystal Growth

Bridgman growth and characterization of Bi4(Ge xSi1-x)3O12 mixed crystals

Optical and Scintillation Properties of Bi_{4}(Ge_{x}S_{1-x})_{3}O_{12} Single Crystal

Synthesis of compounds with a crystal structure of sillenite within the pseudobinary stable system Bi12GeO20–Bi12SiO20*

Growth, Mechanical and Thermal Properties of Bi4Si3O12 Single Crystals

Crystallization Properties of Ge-Se-Bi Thermoelectric Glasses

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Non-isothermal Crystallization Kinetics and Phase Transformation of Bi2O3-SiO2 Glass-Ceramics

A New Route for the Synthesis of Pure Bi<sub>4</sub>(SiO<sub>4</sub>)<sub>3</sub> Crystals by Glass Melt-Cooling Method

Unprecedented Metallic BiS Phase from the Binary Bi–S Family Revisited under Extreme Conditions of High Pressure and High Temperature

Structural study of crystalline and amorphous phases of Si0.65Ge0.35B (x = 0, 0.01, 0.05, 0.10) alloy prepared by long-time mechanical alloying

Growth Of Bi2sr2cacu2o8 Single-Crystals From Bi-Rich Melts

A Novel Method for Preparation of Pure Bi2SiO5 Crystals

The Elastic Anisotropy, Electronic and Optical Properties of Bi4Si3O12, Bi2SiO5, Bi12SiO20 and Bi2Si3O9 Crystals from First-Principles Calculations

PREPARATION AND CHARACTERIZATION OF Bi_4Si_3O_(12) POWDERS BY CHEMICAL SOLUTION DECOMPOSITION TECHNIQUE

A New Route for the Synthesis of Pure Bi-4(Sio4)(3) Crystals by Glass Melt-Cooling Method

Preparation and optical properties of Bi<sub>2</sub>S<sub>3</sub> microcrystallite doped glass and thin film by the sol-gel process

Study on crystallization behaviors of As-Se-Bi chalcogenide glasses

Preparation and Characterization of A New Single Crystal Bi2sr1.5pr2.5cu2oy

Growth Of Bi2sr2ca1-Xprxcu2oy Single Crystals From Bi-Rich Melts

Effect Of Sb2o3 On Thermal Properties Of Glasses In Bi2o3-B2o3-Sio2 System