Fabrication of Sub-20nm Metal Nanogaps from Nanoconnections by the Extended Proximity Effect

Sun Yan,Chen Xin,Dai Ning
DOI: https://doi.org/10.3321/j.issn:0253-4177.2008.09.005
2008-01-01
Journal of Semiconductors
Abstract:We describe the fabrication of metal nanogaps of sub-20nm in feature size using the proximity effect in electron beam lithography (EBL). The proximity effect is extended to develop a flexible and practical method for preparing metal (e. g. Au or Ag) nanogaps and arrays in combination with a transfer process (e. g. ,deposition/lift-off). Different from the direct gap-writing process, the nanogap precursor structures (nanoconnections) were designed by GDSII software and then written by electron beam. Following a deposition and lift-off process, the metal nanogaps were obtained and the nanogap size can be lowered to ~10nm by controlling the exposure dose in EBL.
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