Effect of Annealing on the High Co-doped Ti1-xCoxO2 Magnetic Semiconductor

Song Hong-Qiang,Wang Yong,Yan Shi-Shen,Mei Liang-Mo,Zhang Ze
DOI: https://doi.org/10.7498/aps.57.4534
2008-01-01
Abstract:High Co doping concentration Ti1-xCoxO2 magnetic semiconductor films were prepared by rf co-sputtering and then annealed for 2 hours at 200℃, 300℃ and 400℃ respectively. Microstructure and composition analysis by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) indicated that the films were in the metastable state and the annealing has large effect on their microstructure, composition and magnetism.
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