Abstract:The barrier enhanced InAs/GaSb long wavelength photodetectors were designed and demonstrated in this paper. A PBIN detector with an electron barrier inserted between P type contactor and absorption region show significantly improved electrical performances compared to a PIN structure. The RmaxA product of the PBIN detector was measured to be 104 Ωcm2 at 80K and 7360 Ωcm2 at 50K. Temperature dependent measurements show that the tunneling currents dominate the dark current below 50K, the generation-recombination (GR) currents dominate from 50K to 90K, and the diffusion current dominate over 90K. The PBIN structure benefits from a lower electric field in the absorption region and therefore, suppressed the tunnel currents and GR currents. To improve the quantum efficiency, Be-doping was employed to convert the conductivity of the long wavelength SL structure, the PN junction moves away from the B-I hetrostructure to the π-N interface, which loses the barrier effect. Therefore, the hole barrier was needed to form a PBπBN structure. In this paper, hole barrier was designed without Al element to form a PBπBN structure. The RmaxA product of the PBπBN detector was measured to be 77 Ωcm2 and the dark current density under -0.05V bias was measured to be 8.8×10-4A/cm2 at 80K. The peak current responsivity at 9.8 μm was 2.15A/W and the quantum efficiency was 26.7%.

Molecular Beam Epitaxial Growth, Characterization and Performance of High-Detectivity GaInAsSb/GaSb PIN Detectors Operating at 2.0 to 2.6 Μm

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Molecular Beam Epitaxy Growth and Characteristics of the High Quantum Efficiency InAs/GaSb Type-Ii Superlattices MWIR Detector

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy

High Performance InAs/GaSb Superlattice Long Wavelength Photodetectors Based on Barrier Enhanced Structures

Electrical and optical characterisation of InGaAsSb-based photodetectors for SWIR applications

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors

Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector with N-B-p Design Grown on GaAs Substrate

GaAsSb: a novel material for near infrared photodetectors on GaAs substrates

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

Very Long-Wavelength (~20μm) InAs/GaSb Superlattice Infrared Detector with Double InSb-like Interfaces

Demonstration of Si Based InAs/GaSb Type-Ii Superlattice P-I-n Photodetector

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Long-Wavelength InAs/GaSb Superlattice Detectors With Low Dark Current Density Grown by MOCVD

Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors

Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Electrical and Optical Performances of Ingaas/Gaassb Superlattice Short-Wavelength Infrared Detectors

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array