Abstract:The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 um light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope (AFM) and transmission electron microscope (TEM). Also, the current-voltage (I-V) of the p+Si/n-GaAsSb heterojunction shows ideal rectifying characteristics with an ideality factor of 1.15. The I-V tests across multiple devices confirm high consistency and yield. Furthermore, the X-ray photoelectron spectroscopy (XPS) measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies.

Design and performance of GaSb-based quantum cascade detectors

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

Design and Performance of an InAs Quantum Dot Scintillator with Integrated Photodetector

GaAsSb: a novel material for near infrared photodetectors on GaAs substrates

Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photodetector

Design considerations for a long-wavelength InAsSb detector diode

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

High-responsivity operation of quantum cascade detectors at 9 µm

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

Electrical and optical characterisation of InGaAsSb-based photodetectors for SWIR applications

InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors

Long-Wavelength InAs/GaSb Superlattice Detectors With Low Dark Current Density Grown by MOCVD

A GaN/AlN Quantum Cascade Detector with a Broad Response from the Mid-Infrared (4.1 Μ M) to the Visible (550 Nm) Spectral Range

Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction

Molecular Beam Epitaxial Growth, Characterization and Performance of High-Detectivity GaInAsSb/GaSb PIN Detectors Operating at 2.0 to 2.6 Μm

Analysis of Structural Parameters on InGaAsSb/AlGaAsSb Quantum Well

Optical Study on the Coupled GaAsSb/GaAs Double Quantum Wells