Abstract:We report a new nBn photodetector (nBn-PD) design based on the InAlSb/AlSb/InAlSb/InAsSb material systems for mid-wavelength infrared (MWIR) applications. In this structure, delta-doped compositionally graded barrier (δ-DCGB) layers are suggested, the advantage of which is creation of a near zero valence band offset in nBn photodetectors. The design of the δ-DCGB nBn-PD device includes a 3 μm absorber layer (n-InAs 0.81 Sb 0.19 ), a unipolar barrier layer (AlSb), and 0.2 μm contact layer (n-InAs 0.81 Sb 0.19 ) as well as a 0.116 μm linear grading region (InAlSb) from the contact to the barrier layer and also from the barrier to the absorber layer. The analysis includes various dark current contributions, such as the Shockley–Read–Hall (SRH), trap-assisted tunneling (TAT), Auger, and Radiative recombination mechanisms, to acquire more precise results. Consequently, we show that the method used in the nBn device design leads to diffusion-limited dark current so that the dark current density is 2.596 × 10 −8 A/cm 2 at 150 K and a bias voltage of − 0.2 V. The proposed nBn detector exhibits a 50% cutoff wavelength of more than 5 μm, the peak current responsivity is 1.6 A/W at a wavelength of 4.5 μm and a − 0.2 V bias with 0.05 W/cm 2 backside illumination without anti-reflective coating. The maximum quantum efficiency at 4.5 μm is about 48.6%, and peak specific detectivity ( D *) is of 3.37 × 10 10 cm⋅Hz 1/2 /W. Next, to solve the reflection concern in this nBn devices, we use a BaF 2 anti-reflection coating layer due to its high transmittance in the MWIR window. It leads to an increase of almost 100% in the optical response metrics, such as the current responsivity, quantum efficiency, and detectivity, compared to the optical response without an anti-reflection coating layer.

Design considerations for a long-wavelength InAsSb detector diode

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors

Design for New Structure Inas/Inxga1-Xsb Superlattice Two-Color-Short and Long Wavelength Infrared Photodetector

Very Long-Wavelength (~20μm) InAs/GaSb Superlattice Infrared Detector with Double InSb-like Interfaces

Inas-Based Type-Ii Superlattice Long Wavelength Photodetectors

Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

Multistep InAs/InAsSb Staircase Nbn Long-Wavelength Infrared Detectors with Enhanced Charge Carrier Transport

Schematic of InAs/GaSb superlattice VLWIR photodide with PIN structure and the current responsivity spectrum of the SL photodiode. Interface optimization and fabrication of InAs/GaSb type II superlattice for very long wavelength infrared photodetectors

Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector with N-B-p Design Grown on GaAs Substrate

Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches

High Performance InAs/GaSb Superlattice Long Wavelength Photodetectors Based on Barrier Enhanced Structures

Electrical and optical characterisation of InGaAsSb-based photodetectors for SWIR applications

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

A superlattice-based resonant cavity-enhanced photodetector operating in the long-wavelength infrared

Design of Long‐wavelength Infrared InAs/InAsSb Type‐ii Superlattice Avalanche Photodetector with Stepped Grading Layer