XRD Technique in the Research of Thin Film Materials
Zhou Yuanjun,Xie Zili,Zhang Rong,Liu Bin,Li Yi,Zhang Zeng,Fu Deyi,Xiu Xiangqian,Han Ping,Gu Shulin
DOI: https://doi.org/10.3969/j.issn.1671-4776.2009.02.009
2009-01-01
Abstract:Lattice parameter,stress,strain and dislocation density are critical parameters in the research of thin film materials,and X-ray diffraction(XRD)technique provides a convenient and nondestructive means to measure these physical quantities.The application of XRD technique in thin films research is reviewed from the aspects of lattice constant,stress,strain and dislocation density,respectively.The lattice constant measure of semiconductor thin films by XRD is introduced.The strian and stress in semiconductor heterostructural layers are discussed combining with the measure of lattice parameter.The dislocation density analyzed by Mosaic model is emphatically introduced,including comparison of several methods and analysis of advantage and disadvantage.The future development of XRD technique in thin film research is prospected according to XRD theory and latest progress in these fields.