Analysis of Current‐crowding Effects in RF‐MEMS Spiral Inductors by Simple Equivalent Circuits

YJ Zhang,HB Long,ZH Feng
DOI: https://doi.org/10.1002/mop.10280.abs
IF: 1.311
2002-01-01
Microwave and Optical Technology Letters
Abstract:The metal loss of multitrurn spiral inductors is known to increase dramatically under current-crowding effects at high frequencies. An equivalent circuit is derived to simulate this current crowding, including skin and proximity effects. An efficient formula is derived to calculate self- and mutual coupling of currents in irregular hexahedrons. Possible approaches for the design of high-Q RF-MEMS spiral inductors are discussed. (C)2002 Wiley Periodicals, Inc.
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