Abstract:Single crystal silicon is a chemically active semiconductor material with good processing characteristics. With the development of technology, the role of single crystal silicon components in the field of ICF is becoming more and more important. Restricted by traditional processing method and MRF, damage precursors such as scratches and impurities still remain on the surface after processing. That may influence the performance of the elements. In this paper, we study the effect on the surface by two chemical etching methods and the influence on the damage precursors of nano jet polishing. We used HF solution/HNO3 and KOH/ isopropanol to etch the surface of the element. When the etching depth comes to 0.2 μm, pits and scratches could be easily found on the surface. After the etching process, the element was processed by nano jet polishing and the roughness decreased from 1.264nm to 0.986nm.We used nano jet polishing method to process the element polished by MRF in order to research the evolution of comet-tail scratch. The In-situ tracking method was also applied in this study. After the polishing process, the W-D (width to depth ratio) increased from 30.51 to 45.84. The scratch was deactivated and the PTA (photothermal absorption) decreased from 1.5413nA to 1.3500nA. The Ce impurities were also removed. Its concentration decreased from 0.1162mg/L to 0.0005mg/L and the PTA of the element decreased from 0.3044nA to 0.0652nA. From the research, we can easily know that the subsurface damage exposed after the etching process. That may lay the foundation of the nondestructive processing of single crystal silicon. After nano jet polishing process, the quality of the element became better. The roughness and concentration of Ce impurities decreased. The damage precursors were deactivated and the PTA decreased. In a word, chemical etching could expose the surface damage of single crystal silicon and nano jet polishing can improve the laser damage resistance.

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Characterization Techniques and Methods on Single Crystal Surface Machined Damages

Sub-surface Damage of Ultra-Thin Monocrystalline Silicon Wafer Induced by Dry Polishing

Study on Subsurface Damage Model of the Ground Monocrystallinge Silicon Wafers

Microstructure Characterization Of Piezoelectric Single Crystal Substrates For Property Degradation Saw Devices

Sub-Nano Depth Scratches on Various Crystal Surfaces During Chemical Mechanical Polishing

Rayleigh Surface Wave in A Piezoelectric Wafer with Subsurface Damage

Effect of Different Etching Processes on Surface Defects of Quartz Crystals

Mechanical Polishing of CdZnTe Single Crystal and Measurement of Surface Damage Layer

Damage Mechanisms During Lapping and Mechanical Polishing CdZnTe Wafers

Experimental Investigation on the Detection Technique for Surface Layer Damage of Machined Silicon Wafers

A Study on the Surface Quality and Damage Properties of Single-Crystal Silicon Using Different Post-Treatment Processes

Single Crystal Silicon: Surface Evolution Regularity of Chemical Etching and Effect of Nano Jet Polishing on Damage Precursor

X-ray Scattering from a Rough Surface and Damaged Layer of Polished Wafers

Characterization of Surface and Subsurface Defects Induced by Abrasive Machining of Optical Crystals Using Grazing Incidence X-ray Diffraction and Molecular Dynamics

X-Ray Characterization Techniques for the Assessment of Surface Damage in Crystalline Wafers: A Model Study in Aln

Theoretical modeling and experimental analysis of single-grain scratching mechanism of fused quartz glass

Study on the Subsurface Damage Distribution of the Silicon Wafer Ground by Diamond Wheel

Subsurface Damage Detection on Ground Silicon Wafers Using Polarized Laser Scattering

Study on the Subsurface Damage of KDP Crystal Ground with Ultrasonic Vibration Assistance

Surface Damage of Crystalline Silicon Wafers and Their Effects on Electrical Properties