Abstract:The piezoresistive effect of semiconductor materials was discovered firstly in silicon and germanium (Smith, 1954). Dissimilar to the piezoresistive effect of metal materials induced from the change in geometric dimension, the piezoresistive phenomenon in silicon is due to that mechanical stress influences the energy band structure, thereby varying the carrier effective mass, the mobility and the conductivity (Herring, 1955). The gauge factor (GF) is used to characterize the piezoresistive sensitivity and defined as the ratio of the relative resistance change and the generated strain (nondimensional factor). Usually, the GF in silicon is around 100 and changes with stress direction, crystal orientation, doping concentration, etc. Recently, the giant piezoresistances were observed in silicon nanowires (He & Yang, 2006; Rowe, 2008) and metal-silicon hybrid structures (Rowe, et al., 2008), respectively. Although these homogeneous silicon based materials or structures possess high piezoresistive sensitivity, there are still several issues influencing their sensor applications, such as, p-n junction isolation, high temperature instability, high production cost and complex fabrication technologies. As another monatomic silicon material with unique microstructure, polycrystalline silicon has been investigated since the 1960s. The discovery of its piezoresistive effect (Onuma & Sekiya, 1974) built up a milestone that this material could be applied widely in field of sensors and MEMS devices. Moreover, polycrystalline silicon could be grown on various substrate materials by physical or chemical methods, which avoids p-n junction isolation and promotes further its applications for piezoresistive devices (Jaffe, 1983; Luder, 1986; Malhaire & Barbier, 2003). Among numerous preparation methods, the most popular technology is chemical vapour deposition (CVD), which includes APCVD, LPCVD, PECVD, etc. The PECVD method can deposit films on substrates at lower temperatures, but the stability and uniformity of as-deposited films are not good, and the samples could contain a large number of amorphous contents. Subsequently, the metal-induced lateral crystallization (MILC) technique was presented (Wang, et al., 2001). By enlarging grain size and improving crystallinity, the gauge factor of MILC polycrystalline silicon was increased to be about 60. But the MILC polycrystalline silicon-based devices could suffer the contamination from the metal catalyst layer (e.g. Ni, Al, etc.). Compared with the aforementioned technologies, the LPCVD process is a mature and stable CVD method with

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Fabrication of Microcrystalline Silicon Thin Film and the Study of Its Microstructure and Stability

Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

Structural and Electrical Properties of Polysilicon Films Prepared by AIC Process for a Polycrystalline Silicon Solar Cell Seed Layer

Formation of n-type polycrystalline silicon with controlled doping concentration by flash lamp annealing of catalytic CVD amorphous silicon films

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing

Structural Nature of Nanocrystalline Silicon

Polycrystalline Silicon Piezoresistive Nano Thin Film Technology